Abstract:With the aid of ab initio calculations, an n-body potential of the Ni-Nb system is constructed under the Finnis-Sinclair formalism and the constructed potential is capable of not only reproducing some static physical properties but also revealing the atomistic mechanism of crystal-to-amorphous transition and associated kinetics. With application of the constructed potential, molecular dynamics simulations using the solid solution models reveal that the physical origin of crystal-to-amorphous transition is the crystalline lattice collapsing while the solute atoms are exceeding the critical solid solubilities, which are determined to be 19 atom % Ni and 13 atom % Nb for the Nb- and Ni-based solid solutions, respectively. It follows that an intrinsic glass-forming ability of the Ni-Nb system is within 19-87 atom % Ni, which matches well with that observed in ion beam mixing/solid-state reaction experiments. Simulations using the Nb/Ni/Nb (Ni/Nb/Ni) sandwich models indicate that the amorphous layer at the interfaces grows in a layer-by-layer mode and that, upon dissolving solute atoms, the Ni lattice approaches and exceeds its critical solid solubility faster than the Nb lattice, revealing an asymmetric behavior in growth kinetics. Moreover, an energy diagram is obtained by computing the energetic sequence of the NixNb100-x alloy in fcc, bcc, and amorphous structures, respectively, over the entire composition range, and the diagram could serve as a guide for predicting the metastable alloy formation in the Ni-Nb system.

Simultaneous Planar Growth of Amorphous and Crystalline Ni Silicides

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Silicide Formation by Furnace Annealing of Thin Si Films on Large-Grained Ni Substrates

Diffusion-Governed-Asymmetric Growth of Amorphous Layer under Solid-State Reaction in Ni-Zr Multilayers

Growth of amorphous silicide during Ti/Si interfacial reactions in multilayer thin films

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Crystallization of Nisix in A Body-Centered Cubic Structure During Solid-State Reaction Between an Ultrathin Ni Film and Si(001) Substrate at 150-350 Degrees C

Solid-State Interfacial Reaction and Asymmetric Growth of Amorphous Interlayers in Ni/Nb Multilayers. Molecular-Dynamics Simulation Together with Experiments

Origin of Asymmetric Growth During Solid-State Amorphization Studied with Molecular-Dynamics Simulation

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/Amorphous-Silicon Multilayer Thin Films

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Molecular dynamics study of solid state interfacial reaction in the Ni-Mo system

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Solid-State Amorphization in Ni/Mo Multilayers Studied with Molecular-Dynamics Simulation

Solid-State Amorphization Of Ni/Zr Bilayer Through Diffusion-Limited-Reaction Observed By Molecular-Dynamics Simulation

The Crystallization of Cr–Si–Ni–Al Amorphous Films—nucleation and Growth of Intermetallic Phase Cr(Al,Si)2

Solid-state Amorphization in Ni/Nb Mutilayers Studied by Molecular-Dynamics Simulation Together with Experiments

Atomistic modeling of crystal-to-amorphous transition and associated kinetics in the Ni-Nb system by molecular dynamics simulations.