Influence of Interfacial Texture and Asymmetric Growth in Diffusion-Limited Amorphization in Ni-Zr Multilayers Upon Medium-Temperature Annealing

WS Lai,BX Liu
DOI: https://doi.org/10.1103/physrevb.58.6063
1998-01-01
Abstract:Molecular-dynamics simulation, based on an n-body potential, was performed to investigate the amorphization process in the Ni-Zr bilayer and multilayers upon annealing at medium temperatures of 373-873 K. Six sandwich models consisting of atomic planes with different orientations and one bilayer model with a preset disordered interfacial layer were constructed and simulated to reveal the effect of interfacial texture on and the kinetics of the growth of an amorphous layer, respectively, in detail. It was found that when the multilayers had semicoherent interfaces in those sandwich models consisting of Ni close-packed planes parallel to the interfaces, amorphization was frustrated even up to a temperature of 873 K, because of the large associated negative interfacial energies suppressing the interdiffusion at the interfaces. In all the other models constructed by non-close-packed planes of Ni, simulation results showed that amorphization could take place at a temperature down to 673 K and it was initiated through crossing-interface diffusion, diffusion-induced alloying and subsequent growth of the interfacial amorphous layer, resulting eventually in forming a uniform amorphous phase in the models: Concerning the kinetics, the growth of the amorphous layer was found to follow exactly a t(1/2) law, indicating that solid-state amorphization was indeed through a diffusion-limited reaction, and an asymmetric behavior was observed that the growing speeds towards Ni were greater than that directed to the Zr lattice. Besides, there was about a 1% volume expansion in the formed amorphous phase comparing to the original multilayers, which lent support to the excess free volume model proposed for the amorphous structure.
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