Abstract:The strain relaxation at the initial stages of highly mismatched (11.8%) GaSb grown on a GaP substrate following a Ga-rich surface treatment by molecular beam epitaxy has been investigated. High resolution transmission electron microscopy and moiré fringe analysis were used to determine the relaxation state in these GaSb islands in the [110] and [1–10] directions. The measurements revealed an anisotropic strain relaxation in these two directions; there is a higher misfit strain relaxation along the [110] direction where the islands are elongated, which is in agreement with a higher density of misfit dislocations. By combining molecular dynamics simulations and TEM results, the anisotropy in the strain relaxation is shown to be related to the asymmetry in the formation of interface misfit dislocations. The P-core glide set 60° dislocations (α type) and the Ga-core shuffle set Lomer dislocations serve as the primary misfit dislocation which contributes to the strain relaxation in the (1–10) interface, and the Ga-core glide set 60° dislocations (β type) and the P-core shuffle set Lomer dislocations for the (110) interface, respectively. The lower formation energy and higher glide velocity of the P-core glide set 60° dislocations (α type) result in a higher line density and more uniform periodical distribution of the misfit dislocation in the (1–10) interface. The higher fraction of Lomer dislocations, which is related to the dislocation configuration stability and surface treatment, promotes a better strain relief in the (1–10) interface, with a corresponding elongation of islands in the [110] direction.

Influence of GaN Polarity and Intermediate-Temperature Buffer Layers on Strain Relaxation and Defects

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface

Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

GaN Layers with Different Polarities Prepared by Radio Frequency Molecular Beam Epitaxy and Characterized by Raman Scattering

Occurrence of Cubic Gan and Strain Relaxation in Gan Buffer Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

Influence of relaxation on the two-dimensional electron-gas in Al xGa1-xN/GaN/AlyGa1-yN double heterostructure with compressively strained GaN layer

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Temperature Dependent Photoluminescence of Lateral Polarity Junctions of Metal Organic Chemical Vapor Deposition Grown Gan

Influence of strains on the optical properties of non-polar and semi-polar gallium nitride based LEDs

Investigation of the Anisotropic Strain Relaxation in Gasb Islands on Gap

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire