Abstract:Based on the quantum confinement-luminescence center model, to ensembles of spherical silicon nanocrystals (nc-Si) containing two kinds of luminescence centers (LCs) in the SiOinfinity layers surrounding the nc-Si, the relationship between the photoluminescence (PL) and the thickness of the SiOinfinity layer is studied with the excitation energy flux density as a parameter. When there is no SiOinfinity layer surrounding the nc-Si, the electron-heavy hole pair can only recombine inside the nc-Si, then the PL blueshift with reducing particle sizes roughly accords with the rule predicted by the quantum confinement model of Canham. When there presences a SiOinfinity layer, some of the carriers may tunnel into it and recombine outside the nc-Si at the LCs to emit visible light. The thicker the SiOinfinity layer is, the higher the radiative recombination rate occurred outside the nc-Si will be. When the central scale of the nc-Si is much smaller than the critical scale, the radiative recombination rate outside the nc-Si dominates, and visible PL will be possible for some nc-Si samples with big average radius, greater than 4 nm, for example. When there is only one kind of LC in, the SiOinfinity layer, the PL peak position does not shift with reducing particle sizes. All these conclusions are in accord with the experimental results. When there are two or more kinds of LCs in the SiOinfinity layer, the PL peak position energy and intensity swing with reducing particle sizes.

Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

Red Light Emission from Controlled Multilayer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

Light Emitting Devices Based on Nanocrystalline-Silicon Multilayer Structure

Thin Amorphous $\Hbox{si/si}_{3}\hbox{n}_{4}$-Based Light-Emitting Device Prepared with Low Thermal Budget

Thin Amorphous Si/Si3n4-Based Light-Emitting Device Prepared With Low Thermal Budget

Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Blue and Red Light-Emitting Non-Stoichiometric Silicon Nitride-Based Structures

Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Dual-Color Electroluminescence ( $\lambda \approx \hbox{450}\ \hbox{nm}$ and 650–700 nm) From a Silicon-Based Light Source

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Luminescent Amorphous Silicon Oxynitride Systems: High Quantum Efficiencies in the Visible Range

Field Dependent Electroluminescence from Amorphous Si/Sinx Multilayer Structure

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Mechanisms of Visible Photoluminescence from Nanoscale Silicon Cones

Dual-Color Electroluminescence (<formula formulatype="inline"><tex>$\lambda \approx \hbox{450}\ \hbox{nm}$</tex></formula> and 650–700 nm) From a Silicon-Based Light Source

The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots