Abstract:M1-xSiO3: xEu3+(M = Mg, Ca, Ba) and Sr0.707SiOy:0.1Eu3+ red-emit phosphors were synthesized by solid reaction method. Their excitation and emission spectra were measured. They all emited red light, which could be used for UV and blue LED chip with other phosphors to adjust white LED's color rendering index and color temperature. At room temperature, BaSiO3: Eu3+ showed a strongest red emission peak at 613 nm, and its excitation peaks were located at 393 and 464 nm. Therefore it could be used for adjusting CRI of near-ultraviolet or blue chips-based white-LED. After its emission spectrum was fitted by Gauss function, the energy level transitions of its emission bands was got. The emission bands could be attributed to 5D0→7F0(583.04 nm), 5D0→7F1(592 nm), 5D0→7F2(612.15 and 620.79 nm), 5D0→7F3 (650.55 nm)and 5D0→7F4(688.5 and 701.5 nm) transitions. It was better to use two Gauss functions to fit the emission bands of 5D0→ 7F2 and 5D0→ 4F7 while only one mixed peak of 5D0→ 7F0 and 5D0→ 7F1 transitions was observed.

Dual-Color Electroluminescence (<formula formulatype="inline"><tex>$\lambda \approx \hbox{450}\ \hbox{nm}$</tex></formula> and 650–700 nm) From a Silicon-Based Light Source

Dual-Color Electroluminescence ( $\lambda \approx \hbox{450}\ \hbox{nm}$ and 650–700 nm) From a Silicon-Based Light Source

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Luminescent Properties of a Silicate Red-Emit Phosphor for White-LED

Ca(La1-xEux)4Si3O13 red emitting phosphor for white light emitting diodes

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Red Light Emission from Controlled Multilayer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

Electroluminescence from Silicon-Based Single Ion Transport Light Emitting Electrochemical Cell

Color-tunable Electroluminescence from Eu-doped TiO_2/p^+-Si Heterostructured Devices: Engineering of Energy Transfer

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Dislocation-related electroluminescence of silicon after electron irradiation

Electroluminescence from Au Native Silicon Oxide Layer P(+)-Si and Au Native Silicon Oxide Layer N(+)-Si Structures under Reverse Biases

Electrically Tunable White-Color Electroluminescence from Si-implanted Silicon Nitride Thin Film

Strong Violet And Green-Yellow Electroluminescence From Silicon Nitride Thin Films Multiply Implanted With Si Ions

Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

Two-peak Electroluminescence of Porous Silicon in Persulphate Solution

Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Thin Amorphous <formula formulatype="inline"><tex>$\hbox{Si/Si}_{3}\hbox{N}_{4}$</tex></formula>-Based Light-Emitting Device Prepared With Low Thermal Budget