Thin Amorphous $\Hbox{si/si}_{3}\hbox{n}_{4}$-Based Light-Emitting Device Prepared with Low Thermal Budget

W. Y. Loh

DOI: https://doi.org/10.1109/led.2007.915379

IF: 4.8157

2008-01-01

IEEE Electron Device Letters

Abstract:This letter reports for the first time on an electrically pumped silicon light-emitting device with a thin multilayer stacked amorphous silicon (a-Si, in thickness of 3 - 7 nm)/silicon nitride (similar to 10 nm) structure. The observed photoluminescence (PL) is tunable from similar to 700 to similar to 670 mn, and intensity increases by decreasing the cc-Si thickness. The PL intensity can be enhanced through postdeposition annealing at relatively low temperatures and a short annealing time (e.g., as optimized at 700 degrees C/10 min). Electroluminescence from devices that are built upon the proposed structure originates from electron-hole pair recombination, and the carrier injection mechanism is through Frenkel - Poole tunneling. Our proposed structure, being highly complimentary metal-oxide-semiconductor compatible, benefits from a low thermal budget process coupled with an accurate layer thickness control.