Abstract:Erbium doped Si-related compound films, with the 1540 nm emission coinciding with the minimum loss window of optical telecommunication, are regarded as appealing platforms of light sources for silicon photonics. In many previous reports, however, the unipolar carrier injection in silicon oxide/nitride films leads to favorable impact excitation of Er rather than sensitization, requiring high onset voltage that is not compatible with Si microelectronics. Silicon rich oxynitride (SRON) with tunable bandgap enables equivalent bipolar injection, yet there are few reports about light emitting devices (LEDs) based on this material with Er doping. Here, sensitized electroluminescence (EL) from erbium doped SRON with an onset voltage as low as 5 V has been demonstrated. The sensitization mechanism is evaluated by correlating the evolution of charge transport in SRON films subjected to different thermal treatments with that of Er3+ EL. The EL can be attributed to bipolar Poole-Frenkel injection of carriers and subsequent capture by Si dangling bond related trap states, followed by energy transfer to Er3+ ions. These results indicate that SRON serves as a promising Er3+ host for complementary metal-oxidesemiconductor (CMOS) compatible light sources.

Dual-Color Electroluminescence ( $\lambda \approx \hbox{450}\ \hbox{nm}$ and 650–700 nm) From a Silicon-Based Light Source

Dual-Color Electroluminescence (<formula formulatype="inline"><tex>$\lambda \approx \hbox{450}\ \hbox{nm}$</tex></formula> and 650–700 nm) From a Silicon-Based Light Source

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Luminescent Properties of a Silicate Red-Emit Phosphor for White-LED

Ca(La1-xEux)4Si3O13 red emitting phosphor for white light emitting diodes

Red Light Emission from Controlled Multilayer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Dislocation-related electroluminescence of silicon after electron irradiation

Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers

Electroluminescence from Silicon-Based Single Ion Transport Light Emitting Electrochemical Cell

Color-tunable Electroluminescence from Eu-doped TiO_2/p^+-Si Heterostructured Devices: Engineering of Energy Transfer

400-900 Nm Light Emitting Silicon Nanoparticles

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Two-peak Electroluminescence of Porous Silicon in Persulphate Solution

Thin Amorphous $\Hbox{si/si}_{3}\hbox{n}_{4}$-Based Light-Emitting Device Prepared with Low Thermal Budget

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Violet emission from bulk Si prompted by surface plasmon polaritons

Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing

Electroluminescence from Au Native Silicon Oxide Layer P(+)-Si and Au Native Silicon Oxide Layer N(+)-Si Structures under Reverse Biases

All-silicon Solid Films with Highly Efficient and Tunable Full-Color Photoluminescence