Abstract:N-doped ZnO films were produced using N2 as N source by metal-organic chemical vapor deposition (MOCVD) system which has been improved with radio-frequency (RF)-assisted equipments. The data of secondary ion mass spectroscopy (SIMS) indicate that the concentration of N in N-doped ZnO films is around 5×1020cm−3, implying that sufficient incorporation of N into ZnO can be obtained by RF-assisted equipment. On this basis, the structural, optical and electrical properties of Al–N codoped ZnO films were studied. Then, the effect of RF power on crystal quality, surface morphologies, optical properties was analyzed using X-ray diffraction, atomic force microscopy and photo-luminescence methods. The results illustrate that the RF plasma is the key factor for the improvement of crystal quality. Then the observation of A0X recombination associated with NO acceptor in low-temperature PL spectrum proved that some N atoms have occupied the positions of O atoms in ZnO films. Hall measurements shown that p-type ZnO film deposited on quartz glasses was obtained when RF power was 150W for the Al–N codoped ZnO films, while the resistivity of N-doped ZnO films was rather high. Compared with the Al-doped ZnO film, the obviously increased resistivity of codoped films indicates that the formation of NO acceptors compensate some donors in ZnO films effectively.

Nitrogen and aluminum codoped p-type ZnO films and ZnO p–n homojunctions

Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films

Junction Properties of Nitrogen-Doped Zno Thin Films

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Control of P- and N-Type Conduction in Zno Films and Properties of Zno P-N Homojunctions

P-Type ZnO Films by Monodoping of Nitrogen and ZnO-based P–n Homojunctions

Research of ZnO Homojeneous p-n Junction

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

First-Principles Study of P-Type Nitrogen/Aluminum Co-Doped Zinc Oxide

p-Type conduction in Al–N co-doped ZnO films

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

Preparation of P-Type ZnO Films by Al+N-codoping Method

Reproducibility and Stability of N–Al Codoped P -Type ZnO Thin Films

N and Al co-doping as a way to p-type ZnO without post-growth annealing

Structural, Optical and Electrical Properties of Al–N Codoped ZnO Films by RF-assisted MOCVD Method

Effects of Al Content on Properties of Al–N Codoped ZnO Films

Synthesis and Characterization of Two-Layer-structured ZnO P-N Homojunctions by Ultrasonic Spray Pyrolysis

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique