Abstract:N-doped ZnO films were produced using N2 as N source by metal-organic chemical vapor deposition (MOCVD) system which has been improved with radio-frequency (RF)-assisted equipments. The data of secondary ion mass spectroscopy (SIMS) indicate that the concentration of N in N-doped ZnO films is around 5×1020cm−3, implying that sufficient incorporation of N into ZnO can be obtained by RF-assisted equipment. On this basis, the structural, optical and electrical properties of Al–N codoped ZnO films were studied. Then, the effect of RF power on crystal quality, surface morphologies, optical properties was analyzed using X-ray diffraction, atomic force microscopy and photo-luminescence methods. The results illustrate that the RF plasma is the key factor for the improvement of crystal quality. Then the observation of A0X recombination associated with NO acceptor in low-temperature PL spectrum proved that some N atoms have occupied the positions of O atoms in ZnO films. Hall measurements shown that p-type ZnO film deposited on quartz glasses was obtained when RF power was 150W for the Al–N codoped ZnO films, while the resistivity of N-doped ZnO films was rather high. Compared with the Al-doped ZnO film, the obviously increased resistivity of codoped films indicates that the formation of NO acceptors compensate some donors in ZnO films effectively.

Structural, Optical and Electrical Properties of Al–N Codoped ZnO Films by RF-assisted MOCVD Method

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films

Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD

Influence of Radical Power on the Electrical and Optical Properties of Zno:N Films Grown by Metal-Organic Chemical Vapor Deposition with N2o Plasma Doping Source

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Structural, Optical and Electrical Properties of Al-Zr Codoped ZnO Transparent Conductive Thin Films

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Effects of Al Content on Properties of Al–N Codoped ZnO Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Nitrogen and aluminum codoped p-type ZnO films and ZnO p–n homojunctions

p-Type conduction in Al–N co-doped ZnO films

Electrical and structural properties of Al-doped ZnO films

Structures and Properties of the Al-Doped Zno Thin Films Prepared by Radio Frequency Magnetron Sputtering

Effect of Cr, N co-doping on the structural and optical properties of ZnO thin films deposited by pulsed laser deposition

Study on the Structural, Electrical and Optical Properties of Al-F Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Optical Properties of ZnO Film by Plasma-Assisted MOCVD

The Influences Of Preparation Progress Of Al Doped Of Zno Films On Microstructure And The Optical And Electrical Properties By Mocvd Method