Abstract:This study proposes a broadband complementary metal-oxide semiconductor (CMOS) low-noise amplifier (LNA) with intrinsic band-selective out-of-band (OB) blocker rejection capabilities. The proposed LNA design utilizes a differential four-phase N-path filter as the amplifier load to offer a substantial total load impedance difference between the in-band (IB) and OB frequency bands. This ensures that the LNA design securely accomplishes a high-quality-factor frequency selectivity response with lower radio frequency signal losses and its OB rejection performance is maintained against process, voltage, and temperature variations, compared with the case of using the N-path filter as a signal path. To validate its blocker-tolerable performance, the designed LNA was fabricated using a 65-nm CMOS technology and was primarily characterized in the frequency division duplexing bands of the long-term evolution and fifth-generation new radio standards, spanning from 1.7 to 2.7 GHz. The implemented design consistently achieved a transmitter leakage rejection greater than 17 dB across all target frequency bands from several samples. Furthermore, the design attained IB voltage gains greater than 36.4 dB and 40.4 dB, noise figures (NFs) of 1.78 dB and 1.5 dB, OB input 1-dB compression point greater than –27.0 dBm and –26.7 dBm, and full-/half-duplexing OB input-referred third-order intercept points greater than 4.1/3.8 dBm and 4.8/5.0 dBm at the mid- and high-bands, respectively. The OB-induced NF degradation was maintained at less than 0.7 dB. A total bias current of 37.7 mA was required with a nominal supply voltage of 1.2 V. The occupied active area of the implemented design was approximately 0.77 mm2, excluding the bonding pads and input/output cells.

Saw-Less Gnss Front-End Amplifier With 80.4-Db Gsm Blocker Suppression Using Cmos Directional Coupler Notch Filter

A High-Linearity 7–9-Ghz Receiver Front End with Strength-Oriented Nonlinearity Cancellation

A 0.061-Mm² 1–11-Ghz Noise-Canceling Low-Noise Amplifier Employing Active Feedforward with Simultaneous Current and Noise Reduction

A C-Band Four-Channel Receiver with Current-Sharing and Large-Signal Multigated-Transistor Techniques in 65-Nm CMOS

A 28 GHz LNA using defected ground structure for 5G application

Self-tuned SAW-less GNSS receiver front end with blocker filtering and gain-irrelevant DC offset cancellation

A Multi-Mode Blocker-Tolerant GNSS Receiver with CT Sigma-Delta ADC in 65nm CMOS

A Switchable Dual-Band LNA with Simultaneous Noise and Input Impedance Matching for GSM/TD-SCDMA Applications

A RF CMOS Zero-IF Receiver Front-end for GSM/EDGE

Co-Design of a Low-Noise Amplifier and SPDT SW for Band 42 T/R Modules with Low NF, High Gain, and 50-ohm Matching in Bulk CMOS Technology

A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement

Gain-controlled CMOS Low Noise Amplifier

A 52-to-73GHz Tri-Coupled Transformer Based Noise Self-Canceling and Gm-Boosting LNA with 3.78dB NF and 22.4dB Gain in 40nm CMOS

A 0.4-6 GHz Blocker-Tolerant Receiver in 65 Nm CMOS with Bandwidth-Extended Technologies for Future V2X Applications

A Low-Power 2.4-Ghz Receiver Front-End with a Complementary Series Feedback LNA and a Current-Reused Passive Down-Converter Based on Gm-Boosted TIA for WSN Applications.

A 2-Mw 50-Db DR Wideband Hybrid AGC for a GNSS Receiver in 65 Nm CMOS

Blocker-Tolerant Broadband CMOS Low-Noise Amplifier Employing N-Path Filter-Based Load

A 0.07–3 GHz Wideband Front-End for SDR Receiver with 2.3 Db NF and 12 Dbm IIP<sub>3</sub> in 65 Nm CMOS

6.7 A 1.75dB-NF 25mW 5GHz Transformer-Based Noise-Cancelling CMOS Receiver Front-End

A Quad-Band CMOS Linear Power Amplifier for EDGE Applications Using an Anti-Phase Method to Enhance its Linearity

CMOS Wide Band Programmable Gain Low Noise Amplifier