A Quad-Band CMOS Linear Power Amplifier for EDGE Applications Using an Anti-Phase Method to Enhance its Linearity

Changkun Park,Jonghoon Park,Changhyun Lee
DOI: https://doi.org/10.1109/TCSI.2016.2620559
2017-04-01
Abstract:This work describes the use of an anti-phase method to enhance the linearity of a quad-band CMOS linear power amplifier for EDGE applications. The anti-phase method is applied in a CMOS process, by studying the <inline-formula> <tex-math notation="LaTeX">$\text {g}_{\mathrm {{m3}}}$ </tex-math></inline-formula> characteristic of the transistor and then operating the drive stage in the subthreshold region to cancel the nonlinearity of the power stage. The power amplifier is fabricated with a <inline-formula> <tex-math notation="LaTeX">$0.11~\mu \text {m}$ </tex-math></inline-formula> RF CMOS process and packed with a 44-pin QFN package. It operates in the GSM-800, EGSM-850, DCS-1800, and PCS-1900 bands. Application of an EDGE signal of 2.96 dB PAPR gives measured results of 26.2 and 26.7 dBm of average output power and 19.4% and 25.6% of PAE at 915 and 1910 MHz, respectively. No digital pre-distortion and off-chip components are present.
Engineering,Computer Science,Physics
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