A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement

Ning-Yi Wang,Hao Wu,Liu, J.Y.-C.,Jianhua Lu,j y liu,hsiehhung hsieh,poyi wu,chewnpu jou,mauchung frank chang
DOI: https://doi.org/10.1109/RFIC.2011.5940603
2011-01-01
Abstract:A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive gm-enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm2 and draws 34mA from 1V supply.
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