A RF CMOS Zero-IF Receiver Front-end for GSM/EDGE

Si XIONG,Yumei HUANG,Zhiliang HONG
DOI: https://doi.org/10.3969/j.issn.1000-3819.2011.03.009
2011-01-01
Abstract:A RF CMOS zero-IF receiver front-end for dual-band (900 MHz/1800 MHz) GSM/EDGE applications is presented. The RF front-end comprises two separate LNAs and quadrature mixers. The current mode passive mixers are employed to lower the flicker noise. The RF front-end is manufactured in a 0.13 μm CMOS process and occupies an active chip area of 0.9 mm×1.0 mm. The RF front-end achieves a NF of 2.9 dB and 3.2 dB, IIP3 of -12.8 dBm and -11.9 dBm for the low band (900 MHz) and the high band (1800 MHz), respectively. The front-end consumes 16.3 mA at 1.2 V for the low band and 2 mA more for the high band.
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