Abstract:In situ wafer bending and interfacial fluid pressure measurements for a 12-inch multi-zone chemical mechanical polishing (CMP) are reported over a range of zone pressures from 0 to 2.0 psi. Effects of zone pressure configurations on wafer bending and interfacial fluid pressure were studied using a novel in situ measurement system. The individual zone pressure loading tests confirm that the multi-zone wafer carrier has obvious zone-loading effect on wafer bending. The multi-zone loading tests reveal that different zone pressure configurations may result in different wafer bending profiles and fluid pressures during CMP: with the constant mean zone pressure of 1.0 psi, compared with the normal deformed wafer under uniform zone pressures, center-higher zone pressures generate convexly deformed wafer, and the largest fluid pressure, supporting 32% of the downforce; while edge-higher zone pressures trend to produce concavely deformed wafer, and the lowest fluid pressure. Particularly, edge zone pressure has obvious effect on wafer edge bending profile, higher edge pressure leads to concave deformation of the wafer edge, as a result, the fluid pressure decreases with an increase in edge zone pressure. It is expected that this study can give assistance to the process control of multi-zone CMP. (c) 2013 Elsevier B.V. All rights reserved.

Primary Study of the Carrier of CMP

Research on CMP Process Parameters Effect on Slurry Transport

The Developed History on the Back Pressure Distribution of CMP Carrier

Wafer Back Pressure Control and Optimization in the Cmp Process

Effect of Zone Pressure on Wafer Bending and Fluid Lubrication Behavior During Multi-Zone Cmp Process

Analysis on Contact and Flow Features in CMP Process

Analysis on Pad Effects in Chemical Mechanical Polishing

In Situ Measurement of Fluid Pressure at the Wafer-Pad Interface During Chemical Mechanical Polishing of 12-Inch Wafer

Study on the Effecting Factors of the Removal Rate During CMP Process

A Preliminary Model Accounting for the Suction Pressure in CMP Process

Research on Improvement of CMP Thickness Uniformity Control on Wafer Edge Defocus Defects

Numerical and Experimental Investigation on Multi-Zone Chemical Mechanical Planarization

Contribution of Porous Pad to Chemical Mechanical Polishing

The introduction about several down pressure structures of CMP tools

Study on the defect of copper CMP

Contact Stress Non-Uniformity of Wafer Surface for Multi-Zone Chemical Mechanical Polishing Process

Study on Optimum Process of CMP

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Study on the dishing of copper in CMP

The CMP by Polishing with GiP Dressed by BODD

Comparative Study of the Lubricating Behavior Between 12-In. Copper Disk and Wafer During Chemical Mechanical Polishing