Abstract:We report a study of copper indium gallium selenide (CIGS) thin film growth in the annealing process at temperature range from 120 °C to 600 °C. Thin films were prepared by sputtering metal precursors and subsequent selenization process. Surface morphologies of thin films were observed by using high resolution field emission scanning electron microscopy (FESEM). Phases in quaternary systems Cu–In–Ga–Se were investigated by X-ray diffraction (XRD). Evolution of crystalline structure in the film surface was studied by Raman spectra. A possible reaction path from metallic precursors to a single CIGS phase was obtained by merging all results of SEM, XRD and Raman. Above 210 °C, selenium reacted with Cu and In to form binary selenide. CuSe crystalline platelets were observed clearly in the film surfaces. When temperature was reaching 380 °C, Cu2−xSe and InSe reacted with excess Se to form CuInSe2 (CIS) and contributed to the grain growth. Above 410 °C, Ga-rich phase was detected in the films. With increased temperature, Ga diffused into CIS crystalline lattices. Finally, at 600 °C, a single phase of Cu‐In‐Ga‐Se quaternary system was formed. A large number of triangular and hexagonal structures were observed in the film due to a re-crystalline process at a high annealing temperature.

Application of Sputtering-Based Laminating Selenylation Process to Preparation of CIGS Thin Films

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Study on Two-Step Process of Preparing CIGS Films

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Effect of Substrate Temperature on CIGS Thin Films Prepared by Quarternary Laminating Selenization Proces

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Effect of Se Vapor Concentration on Cigs Film Preparation

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

ANNEALING STUDIES ON CIGSE PREPARED BY MAGNETRON SPUTTERING

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

PROCESS AND PERFORMANCE OF CHALCOPYRITE CIGSe ABSORBERS FABRICATED BY MAGNETRON SPUTTERING

An Optimized In–CuGa Metallic Precursors for Chalcopyrite Thin Films

Pulsed rapid thermal process for tailoring the surface sulfurization of CIGSe thin film at low temperature

Influences Of The Selenization Duration On Compositions And Microstructures Of Cigs Absorber

Preparation and layer-by-layer solution deposition of Cu(In,Ga)O2 nanoparticles with conversion to Cu(In,Ga)S2 films

Influence of Silicon Oxide Processes on the Performance of Copper Indium Gallium Selenide Flexible Solar Cells

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures