Abstract:Band Structures and optical matrix elements of quantum wires(QWR's) made of short-period superlattices(SPS) with strain-induced lateral ordering(SILO) are investigated theoretically via an effective bond-orbital model(EBOM) combined with a valence-force field(VFF) model. Valence-band anistropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. In particular, Ga(1-x)In(x)As QWR's grown by SILO process are considered. A VFF model is used to find the equilibrium atomic positions in the SILO QWR structure by minimizing the lattice energy. The strain tensor at each atomic(In or GA) site is then obtained and included in the calculations of electronic states and optical peroperties. It is found that different local arrangement of atoms leads to very different strain distribution, which in term alters the optical properties. In particular, we found that the optical anisotropy can be reversed due to the change in shear strain caused by the inter-change of atomic positions. Good agreement with the existing experimental data on band gap and optical anisotropy can be obtained when a 2D alloy structure with lateral composition modulation in the InAs/GaAs interface planes of the SPS is used. Our studies revealed the possibility of "shear-strain engineering" in SILO QWR light-emitting devices to achieve desired optical anisotropy.

Band Structure Of Al/Si/N-Type Gaas With A Strained Si Interfacial Layer

Electric fields and valence band offsets at strained [111] heterojunctions

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Bandstructures of unstrained and strained silicon nanowire

Electronic Phase Diagram of Single-Element Silicon “strain” Superlattices

Calculation of the valence band structure in strained In 0.7Ga0.3As devices with different surface orientation

Si-C Atomic Bond and Electronic Band Structure of a Cubicsi1−ycyalloy

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Relationships Between Strain and Band Structure in Si(001) and Si(110) Nanomembranes

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Strain-induced energy band gap opening in two-dimensional bilayered silicon film

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Band offset determination of the GaAs/GaAsN interface using the DFT method

Calculation of the bandgap narrowing due to heavy doping in p-type strained Si1-xGex layers