Abstract:As the core component and only isolation component of energy routing equipment, medium voltage high-frequency transformers need to achieve a high insulation level under high power density. Aim for this requirement, the multi-layer shielding structure with shielding structures inside and outside the main wall insulation layer is adapted to the medium voltage high-frequency transformer to achieve the bundling and softening of electrical stress. However, the introduction of shielding structures may cause significant changes in the parasitic parameters of medium-voltage high-frequency transformers, especially in the parasitic capacitor network. The change of parasitic capacitance not only affects the power transmission characteristics of transformers but also changes the electromagnetic coupling path of the system and introduces new electromagnetic interference circuits. Therefore, in this digest, with distributed parameter modeling, an equivalent circuit model for the medium voltage high-frequency transformer with a multi-layer shielding structure is proposed. A five-capacitor network is used for the description of the electrical coupling for the multi-layer shielding structure. The obtaining method of the parameters is proposed in detail. The accuracy of the proposed equivalent circuit is fully verified with the broadband impedance spectrum

Broadband Compact Model for On-Chip Mm-Wave Transformers and Baluns with Emphasis on Capacitive Coupling Effects

Three-solenoid Windings Transformer Baluns on CMOS-grade Silicon Substrate

Compact CMOS Baluns for the 4–10 GHz Band Applications

Comparative investigation on various on-chip center-tapped interleaved transformers: Research Articles

Wideband lumped element model for on-chip (a)symmetrical coupled interconnects on lossy silicon substrate

Compact model for RF CMOS differential transformers up to 30 GHz

Broadband Equivalent Circuit Modeling for Medium Voltage High-Frequency Transformers with Multi-Shielding Structure

An Equivalent Circuit Model with Current Return Path Effects for On-Chip Interconnect Up to 80 Ghz

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Experimental Characterization of On-Chip Inductor and Capacitor Interconnect: Part II. Shunt Case

Electrical Modeling of Multi-Walled Carbon Nanotube (Mwcnt)-Based Capacitors for High-Density RF Integration

Design of Millimeter-Wave Transformer Balun with Isolation Circuit in Silicon Based Technology

Comparative Investigation On Various On-Chip Center-Tapped Interleaved Transformers

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

A Broadband Monolithic Balun Based on 0.13μ CMOS m Process Using Planar-Spiral Transformers

A Broadband Monolithic Balun Based on 0.13/spl mu/m CMOS Process Using Planar-Spiral Transformers

Analysis and Design of Broadband Balance-Compensated Transformer Baluns for Silicon-Based Millimeter-Wave Circuits

Low-loss Balun Design and Compact Modeling for RF/millimeter-wave Circuit Application

Modeling of On-chip Transformers for RFIC Design

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via