Compact CMOS Baluns for the 4–10 GHz Band Applications

G. Q. Yan,M. A. Do,X. P. Yu,J. G. Ma,K. S. Yeo,R. Wu
DOI: https://doi.org/10.1007/s10470-005-3419-7
IF: 1.321
2005-01-01
Analog Integrated Circuits and Signal Processing
Abstract:In this paper, we proposed two baluns, a compact balun and a compact balun with imbalance compensation; both are implemented using the one-poly six-metal (1P6M) 0.18 μ m CMOS process. Both baluns have good performance from 4 to 10 GHz, and consume less silicon area due to their compact structure. The self-resonant frequency is increased by properly selecting metal layer for each spiral winding. The compact balun has a magnitude imbalance of 1 dB and a phase imbalance of 4.6 degree from 4 to 10 GHz. With the imbalance compensation, the balun has a magnitude imbalance of 0.6 dB and a phase imbalance of 1.1 degree from 4–10 GHz. Much better results have been achieved for the compact balun with our proposed imbalance compensation method. Both baluns can be used to perform both single-ended/differential and differential/single-ended conversions in different configurations.
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