Abstract:The challenge for accurate modeling of on-chip RE passive components, L/C/R, lies on the proper consideration of undesired parasities and capturing of distributed nature of the structure at high frequency. This is especially true for inductive components, namely inductors and transformers including baluns, because of the open capacitive and (long-range) magnetic couplings between the top widing metal layers and the lossy silicon substrate.This chapter is mostly focused on the equivalent circuit modeling (i.e., compact modeling) of spiral inductors and transformers, while the modeling of on-chip resistors and capacitors are briefly mentioned. Among the modeling of spirals inductive components, the emphasis is on the calculation and extraction of three key parameters: inductance L (and for transformers also the magnetic coupling coefficient k between the primary and secondary windings), quality factor Q, and self-resonant frequency SRF (due to inevitable parasitic capacitance across the port of the inductor). Both one-pi and two-pi circuit topologies for inductor modeling are reviewed with tilt toward the former because of its renaissance recently. The discussion on transformer modeling is largely based on the seminal work by Long (IEEE J. Solid-State Circuits 35(9): 1368, 2000). Up-to-date circuit applications of spiral transformers are provided as a motivation of studying this important subject.

Modeling of On-chip Transformers for RFIC Design

Comparative investigation on various on-chip center-tapped interleaved transformers: Research Articles

Comparative Investigation On Various On-Chip Center-Tapped Interleaved Transformers

Performance Characterization of Circular Silicon Transformers

Integrated On-Chip Transformers: Recent Progress in the Design, Layout, Modeling and Fabrication

Experimental Characterization of Hybrid Temperature and Frequency Effects on the Performance of Transformers on Silicon Substrate

Modeling of On-Chip Rf Passive Components

A New Highly-Scalable Equivalent Circuit Model for On-Chip Symmetrical Transformer with Accurate Substrate Modeling

Three-solenoid Windings Transformer Baluns on CMOS-grade Silicon Substrate

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

A Derived Physically Expressive Circuit Model For Integrated Passives In Rfic

Compact model for RF CMOS differential transformers up to 30 GHz

Modelling On-Chip Circular Double-Spiral Stacked Inductors for RFICs

Broadband Equivalent Circuit Modeling for Medium Voltage High-Frequency Transformers with Multi-Shielding Structure

Frequency-Thermal Characterization of On-Chip Transformers With Patterned Ground Shields

Quasi-Static Derived Physically Expressive Circuit Model for Lossy Integrated RF Passives

Modeling and Characterization of On‐Chip Interconnects

RF CMOS is More Than CMOS: Modeling of RF Passive Components

A new approach to parameter extraction for on-chip symmetric transformers

Scalable Compact Circuit Model for Differential Spiral Transformers in CMOS RFICs

An ultra-broadband model for on-chip transformers based on pole-residue formulae