Optical-Electrical Properties and Corrosion Behavior of Tantalum-Doped Indium Tin Oxide Films Deposited by Magnetron Sputtering

Xian Ping Dong,Bo Zhang,Jian Sheng Wu
DOI: https://doi.org/10.4028/www.scientific.net/MSF.638-642.2897
2010-01-01
Materials Science Forum
Abstract:Tantalum-doped indium tin oxide films were deposited on glass substrate by co-sputtering with two-targets. Tantalum-doping strengthened the orientation of the (400) plane and resulted in better crystalline structure, larger grain size and lower surface roughness. Due to the better crystallizability of the tantalum-doping films, carrier concentration and the mobility were increased. Tantalum-doping revealed better optical electrical properties. The environmental effects on electrical properties stability and long-term reliability of tantalum-doped films in NaCl, Na(2)SO(4) and HCl solutions at 25 degrees C were also investigated, which simulated corrosion behavior in marine, industrial and acidic environments. The relative resistance change ((Delta)R/R) for tantalum-doped films revealed that the films had the best electrical properties stability and long-term reliability in these aggressive environments. The pre-formation of a protective oxide layer on the surface of the films had an enhancing effect on the corrosion properties.
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