Research on Weakly Alkaline Bulk Slurries Relevant to Chemical Mechanical Polishing for Cobalt Interconnects
Lifei Zhang,Tongqing Wang,Xinchun Lu
DOI: https://doi.org/10.1007/s00170-023-10824-4
2023-01-01
Abstract:Recently, the technology node shrunk below 7 nm and beyond; cobalt (Co) and its low resistivity, superior adhesion property, and excellent electro-migration performance pledge to transform the integrated circuits’ landscape in several areas, especially in interconnects and logic contacts. The present work proposes a weakly alkaline polishing slurry for Co interconnects, mainly consisting of colloidal silica, hydrogen peroxide, glycine, and 1,2,4-triazole at pH 8.1. The feature of tunable high material removal rate (greater than 1000–2000 Å/min) and fitting removal selectivity ( 160) between Co and oxide dielectric could be realized by a moderately variable concentration of glycine complexing agent. Moreover, several analytical techniques, including electrochemical analysis, X-ray photoelectron spectroscopy survey, and adsorption isotherm characterization, were used to understand the interaction mechanism during Co material removal process. The results reveal that 1,2,4-triazole could adsorb on the Co oxide layers via physisorption, achieving an inhibition effect to avoid Co excessive corrosion. Furthermore, the oxidization of hydrogen peroxide, the complexation of glycine zwitterions, and the abrasive mechanical action are critical to maintaining the appropriate material removal rate. Based on the results with research-level wafers, the optimized Co bulk slurry was ultimately applied to the production-level of Co and oxide dielectric wafers. The residual particle, haze condition, and surface profile after polishing have been researched simultaneously.