Abstract:Chemical mechanical planarization (CMP) is an integral part in semiconductor processing including the back-end-of-line (BEOL) step. A goal of CMP is to uniformly polish the metal interconnects and the liner/barrier materials while minimizing CMP-related defects such as pitting, dissolution, and galvanic corrosion. A variety of azoles are used as corrosion inhibitors such as benzotriazole (BTA) to prevent corrosion defects during polishing. [1,2] These azoles work together with particles in the slurries to polish the overplated metal forming the interconnects. However, azoles are very poorly biodegradable during wastewater treatment and highly toxic to the nitrification process, which requires expensive wastewater treatment challenges. [3,4] Also, it is known that the use of BTA leads to contamination of Cu films by forming undesirable hydrophobic organic residues (e.g., BTA and Cu-BTA complexes), [5] making their removal very difficult during cleaning. To address these challenges aliphatic amino acids were examined as potential corrosion inhibitors to replace problematic azoles in CMP slurries. Three amino acids were considered in a model CMP slurry. These three were chosen for their unique functional groups: methionine, containing a sulfur group, glutamic acid, having an extra carboxylic acid group, and leucine, having a branched hydrocarbon chain. A representative polishing slurry with 35 nm colloidal silica abrasives, 1 wt% hydrogen peroxide as an oxidizer, 0.5wt% arginine as a complexing agent, at pH 8 was used. Three experimental aims were considered (1) corrosion characterization of the three amino acid and BTA electrolytes with linear sweep voltammetry; (2) comparison of the Co and Cu metal removal rate (MRR) in polishing experiments with a proto-type CMP polisher with 8” wafers, and (3) oxidation of the amino acids and BTA in a Fenton assisted electrooxidation reaction. Methionine was most effective in controlling the galvanic corrosion of the Cu-Co couple. The Co and Cu MRR decreased in the presence of three amino acids and showed comparable removal selectivity. The forced degradation of the amino acids under the Fenton-assisted electrooxidation confirmed that they were more readily degraded compared to BTA. Acknowledgments : This work was supported by the Semiconductor Research Corporation grant (Task 3100.001) under the Global Research Collaboration program. References Seo, J., A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization. Journal of Materials Research 2021, 1-23. C. Peethala, H. P. Amanapu, U. Lagudu, and S.V. Babu, J. Electrochem. Soc, 159(6), H582-H588, 2012. D.E. Speed, Chapter 11, Advances in chemical mechanical planarization (CMP) 2nd edition, Babu, S. V., Ed. 2021. G. Li et al. / Chemosphere 241 (2020) 1249932. Seo, J.; Vegi, S. S. R. K. H.; Babu, S.V. ECS Journal of Solid State Science and Technology 2019, 8 (8), P379–P387.

Characterization of 1, 2, 4-Triazole as Corrosion Inhibitor for Chemical Mechanical Polishing of Cobalt in H2O2 Based Acid Slurry

Study on effect of different complexing agents and inhibitors on Co corrosion in H2O2 based alkaline solution by EQCM

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry

Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

1,2,4-Triazole as a corrosion inhibitor in copper chemical mechanical polishing

Experimental and Density Functional Theory Study of Inhibitors on Cobalt Corrosion for Chemical Mechanical Planarization Process

Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru

Corrosion inhibition threshold effect of 1,2,4-triazole in alkaline chemical mechanical polishing of copper: Investigations using synchrotron radiation microinfrared

The effect of glycine and benzotriazole on corrosion and polishing properties of cobalt in acid slurry

Passivation Kinetics of 1,2,4-Triazole in Copper Chemical Mechanical Polishing

The Role of Dipotassium Ethylenediaminetetraacetic Acid and Potassium Oleate on Chemical Mechanical Planarization Relevant to Heterogeneous Materials of Cobalt Interconnects

Effect of Corrosion Inhibitor and Non-ionic Surfactant on CMP of Cu/Co Barrier Stack

Research on Weakly Alkaline Bulk Slurries Relevant to Chemical Mechanical Polishing for Cobalt Interconnects

Study on the film forming mechanism, corrosion inhibition effect and synergistic action of two different inhibitors on copper surface chemical mechanical polishing for GLSI

Mechanism of 1,2,4-Triazole During Copper Chemical Mechanical Planarization

Ruthenium and Copper CMP in periodate-based slurry with BTA and K2MoO4 as compound corrosion inhibitors

Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing

Mechanisms of Mixed Corrosion Inhibitors in Copper Chemical Mechanical Polishing

Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

Environmentally Friendly Amino Acid-Based Polishing Slurry with Reduced Galvanic Corrosion at Copper/Cobalt Interface for Advanced Cu Interconnect Applications