Abstract:Cobalt (Co), with its low resistivity, superior adhesion property, and void-free seamless fill ability, is being considered by the industry as a promising candidate to replace the conventional tungsten contact plugs for middle-of-the-line and the wiring metal copper interconnects for back-end-of-the-line. Chemical mechanical polishing (CMP), whose demand is greatly increasing as device dimensions shrink to 7-nm node, has been recognized as one of the indispensable manufacturing approaches for the fabrication of multilevel metal interconnection structures. In addition to meeting the appropriate removal rates and removal selection of heterogeneous materials, excellent wafer surface quality and minimized residual particles, also have become the criteria in the developing process of CMP slurries for Co interconnects. This work investigates the optimization process of the final CMP step for Co interconnects by introducing surfactants in hydrogen peroxide based slurries. Various types of surfactants having different functional groups were employed and compared thoroughly by material removal rates (MRRs) and selectivity. The chemical and mechanical mechanisms of various surfactants during CMP process have been clearly revealed by various approaches, including polishing and static etching experiments, electrochemical analysis, tests of absolute zeta potentials, and particle sizes, as well as wafer surface energy measurements. Research results show that Co MRRs are directly correlated with functional groups of various surfactants. Moreover, absolute zeta potentials of abrasive particles can be deeply influenced by different types of surfactants, where the correlation between absolute zeta potentials and Co MRRs presents strong negative. On the other hand, direct positive correlation between oxide MRRs and particle sizes affected by corresponding surfactants can be summarized. Meanwhile, no obvious corresponding relationship between contact angles and MRRs was found, indicating MRRs were barely affected by wettability of wafer surfaces. At last, the selected surfactants were applied to 12-inch wafers for verification, including MRRs, removal selectivity, defects and surface roughness. Each of these surfactants could make Co and TEOS surface Ra maintain at around below 0.7 nm and 0.3 nm, with a number of residual particles lower than 600 particle/wafer.

Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

The Role of Dipotassium Ethylenediaminetetraacetic Acid and Potassium Oleate on Chemical Mechanical Planarization Relevant to Heterogeneous Materials of Cobalt Interconnects

Synergetic effect of benzotriazole and non-ionic surfactant on copper chemical mechanical polishing in KIO 4 -based slurries

Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Chemical Mechanical Polishing of Molybdenum in Potassium Iodate-Based Acidic Slurries

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Research on Weakly Alkaline Bulk Slurries Relevant to Chemical Mechanical Polishing for Cobalt Interconnects

Controlled Corrosion Behaviors of Copper in Oxidizer Solutions for Chemical Mechanical Polishing: Influence of the Decomposition Products

Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects

Characterization of 1, 2, 4-Triazole as Corrosion Inhibitor for Chemical Mechanical Polishing of Cobalt in H2O2 Based Acid Slurry

Evaluation and Mechanism Study of a Novel Green Chemical Mechanical Polishing Slurry for Cobalt Interconnects

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry

Investigation on the Galvanic Corrosion of Copper During Chemical Mechanical Polishing of Ruthenium Barrier Layer

Potassium persulfate as an effective oxidizer for chemical mechanical polishing of GCr15 bearing steel

The Influence of Slurry Containing Polystyrene Particles on Copper Chemical Mechanical Planarization

Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry

Ruthenium and Copper CMP in periodate-based slurry with BTA and K2MoO4 as compound corrosion inhibitors

Mechanisms of copper removal during chemical mechanical polishing

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization