Abstract:Cobalt (Co), with its low resistivity, superior adhesion property, and void-free seamless fill ability, is being considered by the industry as a promising candidate to replace the conventional tungsten contact plugs for middle-of-the-line and the wiring metal copper interconnects for back-end-of-the-line. Chemical mechanical polishing (CMP), whose demand is greatly increasing as device dimensions shrink to 7-nm node, has been recognized as one of the indispensable manufacturing approaches for the fabrication of multilevel metal interconnection structures. In addition to meeting the appropriate removal rates and removal selection of heterogeneous materials, excellent wafer surface quality and minimized residual particles, also have become the criteria in the developing process of CMP slurries for Co interconnects. This work investigates the optimization process of the final CMP step for Co interconnects by introducing surfactants in hydrogen peroxide based slurries. Various types of surfactants having different functional groups were employed and compared thoroughly by material removal rates (MRRs) and selectivity. The chemical and mechanical mechanisms of various surfactants during CMP process have been clearly revealed by various approaches, including polishing and static etching experiments, electrochemical analysis, tests of absolute zeta potentials, and particle sizes, as well as wafer surface energy measurements. Research results show that Co MRRs are directly correlated with functional groups of various surfactants. Moreover, absolute zeta potentials of abrasive particles can be deeply influenced by different types of surfactants, where the correlation between absolute zeta potentials and Co MRRs presents strong negative. On the other hand, direct positive correlation between oxide MRRs and particle sizes affected by corresponding surfactants can be summarized. Meanwhile, no obvious corresponding relationship between contact angles and MRRs was found, indicating MRRs were barely affected by wettability of wafer surfaces. At last, the selected surfactants were applied to 12-inch wafers for verification, including MRRs, removal selectivity, defects and surface roughness. Each of these surfactants could make Co and TEOS surface Ra maintain at around below 0.7 nm and 0.3 nm, with a number of residual particles lower than 600 particle/wafer.

Effect of Potassium Tartrate on Removal Rate Selectivity of Co/TiN/TEOS for Cobalt “Buff Step” Chemical Mechanical Planarization

The Role of Dipotassium Ethylenediaminetetraacetic Acid and Potassium Oleate on Chemical Mechanical Planarization Relevant to Heterogeneous Materials of Cobalt Interconnects

Counterion-Driven Mechanochemical Reactions at TC4 Alloy/SiO2 Interfaces: Electrical Double Layer and Dynamic Ionic Radius

Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

Characterization of 1, 2, 4-Triazole as Corrosion Inhibitor for Chemical Mechanical Polishing of Cobalt in H2O2 Based Acid Slurry

Mechanism of material removal in tungsten carbide-cobalt alloy during chemistry enhanced shear thickening polishing

Research on Weakly Alkaline Bulk Slurries Relevant to Chemical Mechanical Polishing for Cobalt Interconnects

Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

Effect of Potassium Ferrocyanide on CMP Performance of Ruthenium in H 2 O 2 -based Slurries

Evaluation and Mechanism Study of a Novel Green Chemical Mechanical Polishing Slurry for Cobalt Interconnects

The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry

Effect of Potassium Ions on Tantalum Chemical Mechanical Polishing in H2O2-Based Alkaline Slurries

The Role of EDTA-2K in the Chemical Mechanical Polishing of Aluminum

Experimental and Density Functional Theory Study of Inhibitors on Cobalt Corrosion for Chemical Mechanical Planarization Process

Electrolyte Composition and Removal Mechanism of Cu Electrochemical Mechanical Polishing

Nanoscale Planarization Mechanism of Titanium Chemical Mechanical Polishing

Achieving equivalent removal of Ta and Ru via controlling oxidation for chemical mechanical polishing of advanced barrier layer

Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

Promotive Effect of Organic Acids on the Dispersion of Ceria Slurry and the Removal Rate of TEOS in Chemical Mechanical Polishing

Effects of KIO 4 concentration and pH values of the solution relevant for chemical mechanical polishing of ruthenium