Abstract:Complex oxides show a rich variety of functionalities through their strong coupling to the lattice, electron, orbital, and spin degrees of freedom not only at oxide heterointerfaces but also in layered cuprates. For the topic of oxide heterointerfaces, with advances in growth, delicate tuning of the atomic termination at the interface with layer-by-layer precision is now achievable. The improvements in growth open up opportunities to manipulate the coupling of 3d electrons at complex oxide interfaces, creating intriguing phenomena that are not attainable in bulk constituents alone. For example, two-dimensional electron gases have been found at LaAlO3/SrTiO3 heterointerfaces. For the topic of high-temperature layered cuprates (for example, YBa2Cu3O6+x (YBCO6+x)), charge order (CO) has been the key to understanding the full picture for high transition temperature superconductors. However, two central questions that involve the general picture of the stacking pattern for the CO interlayer in YBCO6+x and how exactly the CuO chain influences the CO on the CuO2 plane remain an open issue. Investigating the nanostructure of the CO and its spatial interplay with superconductivity, as well as the relation between CuO2 bilayers and CuO chain layers simultaneously with atomic-scale spatial and energy resolution, is still under debate. Disentangling the physical origins of the interface properties and interlayer electronic states in complex oxides requires an experimentally direct probe localized at the interfaces and characterization of atomically resolved electronic states in oxides. In this paper, we review the utilization of cross-sectional scanning tunneling microscopy (XSTM) and spectroscopy (XSTS) to directly probe electronic states with atomic precision right at and across complex oxide interfaces and interlayers. With this technique, we probe the structural and electronic properties in complex oxides, revealing the underlying detailed electronic structure (e.g., local electronic density of states and ferroelectric polarization in oxide interfaces, as well as the spatial configuration of CO and its interplay with the superconductivity in YBCO6+x). This forms the basis for an atomic-scale physical understanding of complex oxides, which is also central for designing complex oxide devices.

Electrical Properties and Microstructure of Buried Oxide (box) of Simox Studied by Conducting Atomic Force Microscopy (C-Afm)

Characterization of Nano-Sized Si Islands in Buried Oxide Layer of Simox by Conducting Afm

Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

Thermal Conductivity of High-Integrity Nanometer Buried Oxides by SIMOX

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Revealing the structure of SiO2 and its effects on electrical properties

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

TEM analysis of SIMOX materials

A Novel E-SIMOX SOI High Voltage Device Structure with Shielding Trench

The energy position of electrically active centers in the oxide layer of SIMOX structures

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface

Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator

Study of Low Dose SIMOX Wafer

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

Atomically Resolved Interlayer Electronic States in Complex Oxides by Using Cross-Sectional Scanning Tunneling Microscopy

Investigation of SiO<sub>2</sub>-SiC Interface by High-Resolution Transmission Electron Microscope