Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

Study of Low Dose SIMOX Wafer

Energy Dependence of Low Dose SIMOX Wafers

TEM analysis of SIMOX materials

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

Influence of implantation conditions on quality of SIMOX materials

Fabrication of High Quality Patterned Soi Materials by Optimized Low-Dose Simox

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements

TEM Analysis for Microstructure of SOI Material

Behavior of Residual Oxygen in Top Si Layer of SIMOX Studied by PL and SIMS

Characterizations on the Doping of Single-Crystal Silicon Carbide

Electrical Properties and Microstructure of Buried Oxide (box) of Simox Studied by Conducting Atomic Force Microscopy (C-Afm)

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Effect of Implantation Energy on the Microstructure Evolution of Low Dose Separation of Implanted Oxygen Wafers

Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region

SOI Wafer Achieved by Smart-Cut Process

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Synthesis of SOI Material Using Low Energy Water Ion Implantation

The energy position of electrically active centers in the oxide layer of SIMOX structures