Abstract:A series of low temperature processes incorporated in the silicon on insulator (SOI) formation using Si molecular beam epitaxial growth on porous silicon dramatically reduces the impurity ramp-up from the porous silicon substrate and lowers the doping level in the epitaxial Si layer. A double-layer porous silicon system with a spongy microstructure layer on top of a dendritic microstructure layer was fabricated on a moderately doped p-type Si wafer using a two-step anodization process, and was used as the substrate for Si epitaxy. An extended low temperature annealing in high vacuum was found to be helpful in stabilizing the porous silicon and making it less susceptible to microstructure change during the subsequent heat-treatment. Prior to epitaxy, a Ge-beam treatment was used to lower the temperature necessary for the Si surface cleaning. A low temperature preoxidation process stabilized the porous silicon during the subsequent high temperature oxidation. The choice of a moderately doped substrate and all these low temperature processes helped to achieve a Si epitaxial layer doping of 6 to 8 x 10(15) cm(-3), which is very close to meeting the requirement for direct device fabrication in the SOI without any additional doping compensation.

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Formation of Silicon on Insulator Using Separation by Implantation of Oxygen with Water Plasma

Novel SOI technology - H+ implantation, bonding and separation

Energy Dependence of Low Dose SIMOX Wafers

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Fabrication of High Quality Patterned Soi Materials by Optimized Low-Dose Simox

SOI Wafer Achieved by Smart-Cut Process

Effect of the Substrate Temperature on the Formation of SOI Materials by O Ion Implantation

Ion implantation into Si covered by HfO2 or SiO2 film

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

Optical Characterization of Doped Top Layers in SOI Structures Formed by Ion Implantation

Preparation of SiOC Composite Material Using High-Energy Heavy Ion Irradiation

Auger-Electron and Ir Spectroscopic Studies of Soi Structure Formed by Oxygen and Nitrogen Implantation