Abstract:Due to its intriguingly electrical, thermal and optical characteristics, single-crystal silicon carbide (SiC), one of the most significant wide-bandgap semiconductors, has been receiving intense attention. Up to date, SiC has been investigated for applications in high-power and high-frequency electronics, ultraviolet optoelectronics and quantum computing, which all critically have a strict requirement on the doping of SiC. To improve the quality and reliability of SiC devices, the amounts of both intentionally and unintentionally doped impurities as well as the doping-dependent characteristics like resistivity must be characterized with accuracy and convenience. This article reviews these characterization methods, including elemental analysis, electrical and optical methods. Among those, the term “elemental analysis” dominantly introduces the secondary ion mass spectroscopy technique (SIMS). Meanwhile, for the electrical methods, we will discuss the mature techniques used in laboratory including the Hall effect method, the electrical scanning probe techniques, etc. Moreover, the optical methods introduce the optical absorption method, Raman spectra analysis and photoluminescence spectroscopy. Additionally, a focus is placed specifically on the characterization of the carrier concentration distribution in SiC wafer, which meets the practical requirement for in situ diagnostics of SiC wafers.

Optical Characterization of Doped Top Layers in SOI Structures Formed by Ion Implantation

Optical Effects of Doped Top Layers in Silicon-on-insulator Structures Formed by Ion Implantation

Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Optical Effects of Buried Conductive Layers Formed by MeV Ion Implantation

Auger-Electron and Ir Spectroscopic Studies of Soi Structure Formed by Oxygen and Nitrogen Implantation

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

Optical Characteristics of Multilayer Structures Formed by Ion-Beam Synthesis and Their Computer-Simulation

Optical-Response of Free-Carrier Plasma Effects of Mev Arsenic-Ion-Implanted Silicon

Optical response of free-carrier plasma effects of MeV ion implanted silicon

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Evolution of secondary defects in arsenic implanted Si

Characterizations on the Doping of Single-Crystal Silicon Carbide

Donor incomplete ionization and mobility enhancement in ultra-thin silicon-on-insulator films doped by phosphorus end-terminated polymers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Implant Damage and Redistribution of Indium in Indium-Implanted Thin Silicon-on-insulator

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Preparation of SiOC Composite Material Using High-Energy Heavy Ion Irradiation

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing