Abstract:The silicon suboxide SiOx (x < 2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance silicon oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide layer of up to 1 μm, which was grown on silicon during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. It is a stable oxide exhibiting light emission from 400 to 1700 nm offering scalable and cost-effective large area processing capability. The measurement results reveal interesting properties, which are required to be understood clearly before proceeding with any suitable application. The results have been analyzed using state-of-the-art physical and electrical characterization techniques such as ellipsometry, AFM, SEM, FTIR, photoluminescence lifetime and resistive switching measurements to determine structural, optical and electrical properties. At 300 K the carrier lifetime measurements reveal the lifetime values ranging from about few tens of picosecond up to 4500 picoseconds. Scanning probe analysis indicate a surface roughness of about 30 Å. Resistive memory forming was observed also in these layers at relatively low power thresholds. We provide a comprehensive description of the physical and electrical properties in order to clarify the origin of the observed features. The wavelength dependent real and the imaginary dielectric functions provided useful insights on optical properties. A lookout is given for the possible applications of this special SiOx dielectric oxide layer.

Characterization of Nano-Sized Si Islands in Buried Oxide Layer of Simox by Conducting Afm

Electrical Properties and Microstructure of Buried Oxide (box) of Simox Studied by Conducting Atomic Force Microscopy (C-Afm)

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Thermal Conductivity of High-Integrity Nanometer Buried Oxides by SIMOX

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

Massive 1D Dirac Line, Solitons and Reversible Manipulation on the Surface of a Prototype Obstructed Atomic Insulator, Silicon

Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

Full field chemical imaging of buried native sub-oxide layers on doped silicon patterns

Visualizing Buried Silicon Atoms at the Cd-Si(111)- 7×7 Interface with Localized Electrons

Depth Profiling of Si Oxidation States in Si-Implanted SiO<sub>2</sub> Films by X-Ray Photoelectron Spectroscopy

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Revealing the structure of SiO2 and its effects on electrical properties

Novel SOI technology - H+ implantation, bonding and separation

Characterization of ultrathin SiO2/Si interface grown by low temperature plasma oxidation

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface