The Variation of in Islands on InP Surface Versus Ion Sputtering Angle Observed by the Electron Energy Loss Spectroscopy

Hou Xiao-yuan,Yu Ming-ren,Wang Xun

DOI: https://doi.org/10.1088/0256-307x/2/1/009

1985-01-01

Abstract:The idea of using grazing angle ion sputtering to minimize the formation of In islands on InP(111) surface has been presented and its correctness has been proved by the measurement of electron energy loss spectroscopy.

What problem does this paper attempt to address?

An Angle Resolved Photoemission Study of InP(1̄1̄1̄) Clean Surface

Hou Xiaoyuan,Dong Guosheng,Ding Xunmin,Wang Xun

DOI: https://doi.org/10.1088/0256-307x/3/12/005

1986-01-01

Chinese Physics Letters

Abstract:The energy dispersive relation of surface dangling bond state on InP() clean surface has been measured by the angle resolved photomission. The theoretical calculation based on a slab model and extended Hückel theory agreed well with the experimental result if a surface relaxed atomic structure model for InP() (1×1) is postulated.
Method of In-Process Measurement of Wafer Surface Quality Based on Laser Scattering Principle

张楠,陶正苏,郭瑞鹏

DOI: https://doi.org/10.3969/j.issn.1000-9787.2009.07.034

2009-01-01

Abstract:As the basic material of IC chips,the surface quality of wafer plays an important role in the machining process of IC chips.The surface roughness parameter(Ra,i.e.the arithmetic average height parameter)is chose to evaluate the surface quality of wafer.According to the surface roughness range of silicon wafer(Ra=0.01~0.8 μm),an optical measurement based on the light scattering principle is established,which is founded on a machine vision system.By analyzing the images of the spatial distribution of the scattered light intensity,some parameters are selected to estimate Ra.Elementary experiment results are shown and the feasibility of this method is demonstrated.
Measurements of angular distributions of sputtered material as a new tool for surface-segregation studies: Segregation in CuPt alloys

H.H. Andersen,V. Chernysh,B. Stenum,T. Sørensen,H.J. Whitlow

DOI: https://doi.org/10.1016/0039-6028(82)90127-3

IF: 1.9

1982-12-01

Surface Science

Abstract:The angular distribution of copper and platinum sputtered by argon ions from polycrystalline CuPt targets at 77 K has been measured by a collection technique. The argon-ion energy has been varied from 1.25 to 320 keV. For bombardment energies above 20 keV, differences in the angular distributions for the two elements indicate a strong copper segregation to the surface during bombardment.

chemistry, physical,physics, condensed matter
Dangling Bond Electronic State on an InP(¯111) Surface

XY HOU,GS DONG,XM DING,X WANG

DOI: https://doi.org/10.1016/s0039-6028(87)80339-4

IF: 1.9

1987-01-01

Surface Science

Abstract:The energy dispersion relation of the surface dangling bond state on a clean InP(¯111) surface has been measured by angle-resolved photoemission. The dispersion curve along the ¯Γ¯X direction is identical with those along the ¯Γ¯L direction in the Brillouin zone, and both have 1×1 periodicity. Under excitation by an s-polarized incident wave, the surface state peak vanishes in UPS; this implies that the dangling bonds are perpendicular to the surface and might be related to surface phosphorus atoms. A theoretical calculation based upon a slab model and the extended Hückel theory agreed well with the experimental result if a surface atomic structure with the outmost four layers displaced from their ordinary positions is postulated. In an optimal situation, the displacements take the following values: δ1(P)=0.1 Å, δ2(In)=−0.3 Å, δ3(P)=0.2 Å and δ4(In)=−0.1 Å, where a positive sign represents an outward displacement, a negative sign means an inward displacement.
A LEED, ELS Study of InP(100) Surfaces Prepared by Phosphorus Deposition and Post-Annealing

Xiao-Feng Jin,Ming-Ren Yu,Fu-Rong Zhu,Xun Wang

DOI: https://doi.org/10.1088/0268-1242/1/5/001

IF: 2.048

1986-01-01

Semiconductor Science and Technology

Abstract:Both In-stabilised ( 4 x 2) and P-stabilised ( 1 x 4) surface reconstructions of InP(100) have been obtained by using ion sputtering followed with successive phosphorus deposition and annealing. Electron energy loss spectroscopy has been proved to be a sensitive and reliable technique in identifying the existence of surface indium islands as well as the characteristic of the outermost atomic layer. The ( 1 x 4) structure is probably a random combination of ( 2 x 4) and c( 2 x 8) reconstructions. This suggests that the P-stabilised InP ( 100) surface prepared by the above treatment is less ordered than the In-stabilised ( 4 x 2) structure.
Electron Energy Loss Spectroscopy, Low Energy Electron Diffraction, and Auger Electron Spectroscopy Study of Indium Overlayers on Si(111) and Si(100) Surfaces

MH Sun,C Hu,RG Zhao,H Ji

DOI: https://doi.org/10.1016/j.tsf.2005.05.029

IF: 2.1

2005-01-01

Thin Solid Films

Abstract:In this paper, the behaviors of Indium overlayers on Si(111)7×7 and Si(100)2×1 surfaces have been investigated by low energy electron diffraction, electron energy loss spectroscopy, and auger electron spectroscopy. The behaviors of Indium overlayers on Si(111) and Si(100) surfaces are different. At room temperature, an intermixed interfacial phase was formed during Indium adsorption on Si(111) surface, but Indium was not intermixed with Si substrate on Si(100) surface. At the temperature of ∼550 °C and In coverage >0.5 monolayer, the Si(100) surface could be completely faceted to {310} facets by Indium.
Effects of Surface Topology on the Formation of Oxide Islands on Cu Surfaces

Gw Zhou,L Wang,Jc Yang

DOI: https://doi.org/10.1063/1.1861147

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:We examined the effects of surface topology on the nucleation and growth of Cu2O oxide islands during the initial oxidation stages of Cu(100) and Cu(110) surfaces by in situ ultrahigh vacuum transmission electron microscopy and ex situ atomic force microscopy. Our observations indicate that nucleation of three dimensional oxide islands on single crystal surfaces is homogenous, surface defects and dislocations play a very limited role as preferential sites for oxide nucleation. On the other hand, grain boundaries are the preferential sites for oxide nucleation and the oxide islands formed along the grain boundaries show a faster growth rate than that on flat Cu surface. The oxidation on the faceted Cu(110) surface results in heterogeneous nucleation of oxide islands in the facet valleys and one-dimensional growth along the intersection direction of the facets.
Angle-dependent Negative Ion Formation in H+ Ions Grazing Scattering on Cu(100)

Tao Wang,Wenhao Liang,Pan Dong,Jie Li,Yanghui Wang,Hong Lin,Lei Wan,Zhen Yang,Yue Guo,Guang Zhong,Bin Ding,Yanling Guo,Ximeng Chen,Lin Chen

DOI: https://doi.org/10.1016/j.vacuum.2023.111971

IF: 4

2023-01-01

Vacuum

Abstract:0.5-5 keV-energy H+ ions are scattered from Cu(100) in grazing incidences. The angle dependent positive and negative ion fractions have been measured in the non-specular scattering configuration. The positive-ion frac-tions for 0.5 and 1.0 keV incident energies are about 0% during the variation of the incident angle from 1 degrees to 7 degrees. Moreover, the non-monotonic trends of negative-ion fractions are observed for these two low energies, which may be ascribed to the sufficient Auger neutralization at the non-specular configuration.
Study of ion sputtering on AlxSn100-x alloy system

Zhenxia Wang,Jiping Zhang,Jisheng Pan,Zhenlan Tao,Fuying Zhu,Huiming Zhang,Yuewu Zeng

1994-01-01

Abstract:Angular distributions and preferential sputtering for Sn and Al atoms ejected from the AlxSn100-x (x=90, 70, 50, 30, 10) alloy system bombarded perpendicularly by a 30KeV Ar+ ion beam has been studied with the collector technique and the RBS analysis. The beam current intensity was less than 14 ��A/cm2, the beam total dose 1.4��1018Ar/cm2 and the diameter of spot on the target was 3mm. The experimental results show that there are change of surface topography and local enrichment of elements on the samples after bombardment. All samples bombarded were examined carefully using a SEM/ S-570, A model considering the influence of surface topography and localized element enrichment on the atomic ejection was proposed, and the calculation results are quite satisfactory.
A POSSIBLE SURFACE ATOMIC STRUCTURE MODEL OF InP (100) (4×2) RECONSTRUCTION

HOU XIAO-YUAN,DONG GUO-SHENG,DING XUN-MIN,WANG XUN

DOI: https://doi.org/10.7498/aps.36.1148

1987-01-01

Abstract:The InP(l00) (4×2) reconstructed surface prepared by argon ion bombardment and post annealing under phosphorus pressure has been investigated by LEED, HREELS and UPS. It was found by HREELS that the forming of surface In-H and P-H bonds during hydrogen exposure happened almost simultaneously. By measuring the UP spectra using polarized light sources, it can be verified that the dangling bond states of surface P atoms do not possess the symmetrical characteristic with respect to the two basis vector directions of surface unit mesh. It could be deduced from the above evidences that there must exist some In vacancies on the In-rich InP (100) surface, and the dangling bonds of those P atoms which are located next to the In vacancies orientate off their normal directions. We propose here a missing row-dimer model for the atomic arrangement of InP (100) (4×2) stucture, which could explain the observed experimental qualitatively and might be used as a working model for seeking a precise surface structural model.
A Simple Method for the Evaluation of the Surface in Atom Dimerisation and Electronic States of the InP(100) Surface

CH HUANG,L YE,X WANG

DOI: https://doi.org/10.1088/0268-1242/3/3/001

IF: 2.048

1988-01-01

Semiconductor Science and Technology

Abstract:Small clusters and extended Huckel theory have been employed to calculate the electronic density of states of the InP(100) surface. The total energy calculation reveals a tendency towards dimerisation of surface In atoms.
Fabrication and Characterization of InP/air-gap Structure

刘成,曹春芳,劳燕锋,曹萌,吴惠桢

DOI: https://doi.org/10.3321/j.issn:1005-0086.2008.09.012

2008-01-01

Abstract:The InP/air-gap structure is fabricated by using lateral etching with different etchants.Etching rates,anisotropy and surface roughness are also analyzed.And stiction releasing technology is investigated.Then the surface stress profiling of the InP/air-gap structure has been carried out by micro-Raman measurements,which proves good reliability of our fabrication process.
Scanning Probe Energy Loss Spectroscopy: Angular Resolved Measurements On Silicon And Graphite Surfaces

b j eves,frederic festy,krister svensson,r e palmer

DOI: https://doi.org/10.1063/1.1333404

IF: 4

2000-01-01

Applied Physics Letters

Abstract:We report angle resolved "scanning probe energy loss spectroscopy" measurements from Si(111)-7x7 and graphite surfaces. Electrons incident on the surface after field emission from a scanning tunneling microscope tip are backscattered and detected with an energy and angle resolved hemispherical analyzer. We find that the reflected signal is sharply peaked in the direction parallel to the surface plane. Characteristic energy loss peaks corresponding to bulk and surface plasmon modes of the different surfaces are observed. (C) 2000 American Institute of Physics. [S0003-6951(00)05551-0].
Computational investigation of incident ion angles and material erosion at rough graphite and silicon carbide divertor surfaces

S. Abe,C. H. Skinner,A. Liu,J. Garcia,Z. Lin,S. Bringuier,T. Abrams,B. E. Koel

DOI: https://doi.org/10.1063/5.0095155

IF: 2.2

2022-10-05

Physics of Plasmas

Abstract:We present a computational investigation of the dependence of material erosion on the incident ion angle at rough graphite and silicon carbide divertor surfaces. Ion angle distributions (IADs) for D plasmas at NSTX-U and DIII-D divertors were calculated by an equation-of-motion model that traces the ion trajectories in the sheath. Then, the effective sputtering yields and ion shadowed area fractions were calculated by a Monte Carlo micro-patterning and roughness code that applied the calculated IADs to surface topographic data that were obtained from optical confocal microscopy of rough graphite and SiC divertor surfaces from NSTX-U and DIII-D experiments. The calculations found that the effective sputtering yields, the sputtering pattern, and the shadowed area are determined by the detailed surface topology rather than the root mean square roughness R RMS , which represents deviations from a flat surface. The suppression of the effective sputtering yields for rough surfaces compared to the yield for a smooth surface was accounted for by the change of the mean local incident ion angle (LIIA) ⟨ θ′ ⟩. The mean surface inclination angle distribution (SIAD) ⟨ δ ⟩ was found to be a useful parameter to estimate the LIIA from the calculated IADs. We report global empirical formulas for the mean LIIA and fraction of the area shadowed from the main ions for D plasmas for rough surfaces with B -field incident angles α = 85°–89° as a function of the mean SIAD ⟨ δ ⟩. We propose the use of the mean LIIA ⟨ θ′ ⟩ to estimate the sputtering yield for rough surfaces from the angular dependence of the sputtering yield.

physics, fluids & plasmas
An angle-resolved TOF study on the UV laser-induced etching of InP(100) surface with chlorine

Q.Z. Qin,P.H. Lu,Z.J. Zhuang,Q.K. Zheng

DOI: https://doi.org/10.1016/0009-2614(92)85463-K

IF: 2.719

1992-01-01

Chemical Physics Letters

Abstract:Angular and velocity distributions of desorbing products from UV laser-induced etching of InP(100) surface with a supersonic chlorine molecular beam have been measured with a rotatable quadrupole mass spectrometer. Pulsed laser irradiation at 355 nm produced InCl angular distributions can be fit by I(theta) = a cos-theta+ (1 - a) cos(n)theta. This implies that there are two different desorption channels, one thermal and the other nonthermal. The mean kinetic energy of the InCl is strongly peaked around the surface normal and decreases with increasing detection angle. The laser fluence dependence of the angular distributions of desorbing products is discussed.
In-adlayers on Non-Polar and Polar InN Surfaces: Ion Scattering and Photoemission Studies

T. D. Veal,P. D. C. King,M. Walker,C. F. McConville,Hai Lu,W. J. Schaff

DOI: https://doi.org/10.1016/j.physb.2007.08.185

IF: 2.988

2007-01-01

Physica B Condensed Matter

Abstract:The surface structure of In-polarity c-plane InN has been investigated by low energy ion scattering spectroscopy. Comparison of ion scattering spectra recorded along the [1000] azimuth with model calculations indicates that the clean In-polarity c-plane InN surface is terminated by In-adlayers with a laterally contracted topmost In layer. This is consistent with previous X-ray photoemission and electron diffraction results. Additionally, the surface properties of a-plane InN have been investigated using core-level and valence band X-ray photoemission spectroscopy (XPS). From the ratio of the In and N core-level XPS signal intensities, the clean a-plane InN surface has also been found to be terminated by In-adlayers. Photoemission measurements of the valence band maximum to surface Fermi level separation for a-plane InN indicate the existence of an electron accumulation layer at the surface. This observation of electron accumulation at non-polar InN surfaces in the presence of In-adlayers is in agreement with the predictions of previous first-principles calculations.
InP (110) by Time-resolved XPS

Z. W. Deng,R. W. M. Kwok,W. M. Lau,L. L. Cao

DOI: https://doi.org/10.1116/1.1379510

2000-01-01

Abstract:Time-resolved binding energy (BE) changes of the In 3d5/2 level of heavily doped n-InP (100) (S-doped with a carrier density of 2.4 × 1017 cm−3) and p-InP (100) (Zn-doped with a carrier density of 3.9 × 1018 cm−3) after cleaving in UHV were measured by XPS. Also presented are spectra of survey, In 3d5/2 and P 2p levels after the BE stopped shifting. Measurements were carried out on the in situ cleaved (110) facets. The results show nearly flat band surface as cleaved in UHV. The subsequent binding energy changes reflected the Fermi level shift in the band gap relative to the valence band maximum induced by surface states which are believed to be a consequence of surface lattice relaxation after cleavage. The accurate BE of the as cleaved P 2p level can be obtained via interpolation according to the BE changes of In 3d5/2.
Determination of the Ehrlich-Schwoebel Barrier in Epitaxial Growth of Thin Films

Shao-Chun Li,Y. Han,Jin-Feng Jia,Qi-Kun Xue,Feng Liu

DOI: https://doi.org/10.1103/physrevb.74.195428

IF: 3.7

2006-01-01

Physical Review B

Abstract:We demonstrate an approach for determining the "effective" Ehrlich-Schwoebel (ES) step-edge barrier, an important kinetic constant to control the interlayer mass transport in epitaxial growth of thin films. The approach exploits the rate difference between the growth and/or decay of an adatom and a vacancy two-dimensional island, which allows the "effective" ES barrier to be determined uniquely by fitting with a single parameter. Application to growth of Pb islands produces an effective ES barrier of similar to 83 +/- 10 meV on Pb(111) surface at room temperature.
Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP (111) and (1¯ 1¯ 1¯) surfaces

Xiao-yuan Hou,Shu Yang,Guo-sheng Dong,Xun-min Ding,Xun Wang

DOI: https://doi.org/10.1103/physrevb.35.8015

IF: 3.7

1987-01-01

Physical Review B

Abstract:The hydrogen adsorption on GaAs and InP surfaces has been studied by high-resolution electron-energy-loss spectroscopy (HREELS). The stretching vibration modes of Ga---H, As---H, In---H, and P---H bonds corresponding to different energy-loss peaks in the spectra are all observed. However, the As---H vibration mode is usually confused with a combination loss of the Ga---H stretch plus a Fuchs-Kliewer phonon. Distinguishing As---H from the ``Ga---H+phonon'' peak could be done by comparison of the relative intensities of the loss peaks. The experimental data of HREELS show that the bonding between the adsorbed hydrogen and the surface atoms is largely determined by the surface atomic structure and electron distribution. For the GaAs(111) surface, only surface Ga atoms bond with the hydrogen under low exposures, while at high exposures, both As---H and Ga---H bonds could be formed. On the InP(111) surface (which is treated by annealing under phosphorus pressure), in addition to the In---H bond the P---H bond is formed even at low exposures. Only the P---H loss peak could be seen on InP(1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{}), which illustrates that such a surface is fully terminated with P atoms. In the case of forming facets on the (1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{}) surface, both surface group-III and group-V atoms could be bonded to hydrogen.
In Adlayers on C-Plane Inn Surfaces: A Polarity-Dependent Study by X-Ray Photoemission Spectroscopy

T. D. Veal,P. D. C. King,P. H. Jefferson,L. F. J. Piper,C. F. McConville,Hai Lu,W. J. Schaff,P. A. Anderson,S. M. Durbin,D. Muto,H. Naoi,Y. Nanishi

DOI: https://doi.org/10.1103/physrevb.76.075313

IF: 3.7

2007-01-01

Physical Review B

Abstract:The surfaces of In- and N-polarity InN grown by molecular-beam epitaxy have been investigated using core-level and valence band x-ray photoemission spectroscopy (XPS). From the ratio of the In and N core-level XPS signal intensities, the clean InN surfaces have been found to be terminated by In adlayers, in agreement with the predictions of previous first-principles calculations. The In- and N-polarity surfaces are terminated by similar to 3.4 and similar to 2.0 ML of In, in each case 1 ML more than for Ga on GaN surfaces under metal-rich growth conditions. The valence band XPS indicates a valence band maximum to surface Fermi level separation of 1.32 +/- 0.10 eV for both In- and N-polarity InN surfaces, indicating that the surface space charge is independent of polarity and, unlike for GaN, is not significantly affected by spontaneous polarization. This is due to the In coverage on the surface of InN of both polarities being sufficient to efficiently screen the polarization charge.

The Variation of in Islands on InP Surface Versus Ion Sputtering Angle Observed by the Electron Energy Loss Spectroscopy

An Angle Resolved Photoemission Study of InP(1̄1̄1̄) Clean Surface

Method of In-Process Measurement of Wafer Surface Quality Based on Laser Scattering Principle

Measurements of angular distributions of sputtered material as a new tool for surface-segregation studies: Segregation in CuPt alloys

Dangling Bond Electronic State on an InP(¯111) Surface

A LEED, ELS Study of InP(100) Surfaces Prepared by Phosphorus Deposition and Post-Annealing

Electron Energy Loss Spectroscopy, Low Energy Electron Diffraction, and Auger Electron Spectroscopy Study of Indium Overlayers on Si(111) and Si(100) Surfaces

Effects of Surface Topology on the Formation of Oxide Islands on Cu Surfaces

Angle-dependent Negative Ion Formation in H+ Ions Grazing Scattering on Cu(100)

Study of ion sputtering on AlxSn100-x alloy system

A POSSIBLE SURFACE ATOMIC STRUCTURE MODEL OF InP (100) (4×2) RECONSTRUCTION

A Simple Method for the Evaluation of the Surface in Atom Dimerisation and Electronic States of the InP(100) Surface

Fabrication and Characterization of InP/air-gap Structure

Scanning Probe Energy Loss Spectroscopy: Angular Resolved Measurements On Silicon And Graphite Surfaces

Computational investigation of incident ion angles and material erosion at rough graphite and silicon carbide divertor surfaces

An angle-resolved TOF study on the UV laser-induced etching of InP(100) surface with chlorine

In-adlayers on Non-Polar and Polar InN Surfaces: Ion Scattering and Photoemission Studies

InP (110) by Time-resolved XPS

Determination of the Ehrlich-Schwoebel Barrier in Epitaxial Growth of Thin Films

Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP (111) and (1¯ 1¯ 1¯) surfaces

In Adlayers on C-Plane Inn Surfaces: A Polarity-Dependent Study by X-Ray Photoemission Spectroscopy