Computational investigation of incident ion angles and material erosion at rough graphite and silicon carbide divertor surfaces

S. Abe,C. H. Skinner,A. Liu,J. Garcia,Z. Lin,S. Bringuier,T. Abrams,B. E. Koel

DOI: https://doi.org/10.1063/5.0095155

IF: 2.2

2022-10-05

Physics of Plasmas

Abstract:We present a computational investigation of the dependence of material erosion on the incident ion angle at rough graphite and silicon carbide divertor surfaces. Ion angle distributions (IADs) for D plasmas at NSTX-U and DIII-D divertors were calculated by an equation-of-motion model that traces the ion trajectories in the sheath. Then, the effective sputtering yields and ion shadowed area fractions were calculated by a Monte Carlo micro-patterning and roughness code that applied the calculated IADs to surface topographic data that were obtained from optical confocal microscopy of rough graphite and SiC divertor surfaces from NSTX-U and DIII-D experiments. The calculations found that the effective sputtering yields, the sputtering pattern, and the shadowed area are determined by the detailed surface topology rather than the root mean square roughness R RMS , which represents deviations from a flat surface. The suppression of the effective sputtering yields for rough surfaces compared to the yield for a smooth surface was accounted for by the change of the mean local incident ion angle (LIIA) ⟨ θ′ ⟩. The mean surface inclination angle distribution (SIAD) ⟨ δ ⟩ was found to be a useful parameter to estimate the LIIA from the calculated IADs. We report global empirical formulas for the mean LIIA and fraction of the area shadowed from the main ions for D plasmas for rough surfaces with B -field incident angles α = 85°–89° as a function of the mean SIAD ⟨ δ ⟩. We propose the use of the mean LIIA ⟨ θ′ ⟩ to estimate the sputtering yield for rough surfaces from the angular dependence of the sputtering yield.

physics, fluids & plasmas