Abstract:Surface etching of single-crystal diamond (SCD) in hydrogen plasma plays a decisive role for high-quality homoepitaxy and surface conduction of diamond. The complexity of surface/subsurface condition such as defects would give rise to the distinct morphology features and even further result in the unpredictable properties. Correspondingly, the evolutionary relationship between the morphology and electrical properties of mechanically polished SCDs which have typical cleavage damage in microns depth after hydrogen plasma treatment still needs to be further completed. In this work, the chemical vapor deposited (CVD) SCDs with uniform polishing-caused subsurface cleavage were immersed in microwave hydrogen plasma for variable duration. Time-dependent morphological evolution, multi-mode etched pits (EPs) (resulting from local defects/cracks and dislocations) and associated etching mechanism were comprehensively studied. At the early stage of plasma treatment before 60 min, owing to the obvious surface roughing generated by preferential etching (with the rate of >400 nm/h) of severe mechanically damaged regions, the hole mobility was significantly deteriorated, also accompanying with the apparent drop of sheet concentration. Concurrently, the deposited surface sp2 amorphous carbon (a-C) nanodots on diamond surface and non-sp3 hydrogen bonds reconstruction, which arising from defect-etching produced local abundant carbon-containing radicals or possible exfoliation generated by hydrogen penetration of massive defective regions, also would play an adverse role for the conduction associated with (100) C–H surface. However, the surface roughness was reduced from the maximum 13.2 nm–4.2 nm by prolonging etching, resulting from the smoothing effect of small-angle crystal misorientation on waved height difference related to the uniform (111) cleavage and the removal of dense irregular EPs associated with polishing-induced local defects as well as the vanishing of surface a-C nanodots. In this case, the improvement of surface electrical properties together with the negative correlation of the mobility and sheet concentration were appeared by the gradual formation of (100) diamond surface and the building of uniform (100) C–H bonds.

Single-crystal and polycrystalline diamond erosion studies in Pilot-PSI

Precise Characterization of Atomic-Scale Corrosion of Single Crystal Diamond in H2 Plasma Based on MEMS/NEMS

Erosion yields of carbon under various plasma conditions in Pilot-PSI

Atomic Scale Etching of Diamond: Insights from Molecular Dynamics Simulations

Quality assessment of in situ plasma etched diamond surfaces for CVD overgrowth

Erosion resistance of polycrystalline diamond films to atomic oxygen

Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

Impact of positive ion energy on carbon-surface production of negative ions in deuterium plasmas

Surface Diversifying and Deuterium Retention Characteristics of Doped Graphite with SiC Coating Exposed to Plasma Discharges in EAST Tokamak

The Etching Mechanisms of Diamond, Graphite, and Amorphous Carbon by Hydrogen Plasma: A Reactive Molecular Dynamics Study

High-selectivity Anisotropic Etching of Single-Crystal Diamond by H Plasma Using Iron Catalysis

Diamond Films and Particles Growth in Hydrogen Microwave Plasma with Graphite Solid Precursor: Optical Emission Spectroscopy Study

Mechanistic Insights into the Formation of Dislocation-Related Pits on Diamond Surface under Plasma Etching Treatment: A Combined Simulation and Experimental Approach

Atomic surface of diamond induced by novel green photocatalytic chemical mechanical polishing with high material removal rate

Surface etching evolution of mechanically polished single crystal diamond with subsurface cleavage in microwave hydrogen plasma: Topography, state and electrical properties

Erosion mechanisms of DLC coatings deposited on polyimide and silica substrates when exposed to a pulsed gas discharge

Deterministic Nanopatterning of Diamond Using Electron Beams.

Optimizing reactive ion etching to remove sub-surface polishing damage on diamond

Incorporation of nitrogen into polycrystalline diamond surfaces by RF plasma nitridation process at different temperatures: Bonding configuration and thermal stabilty studies by in situ XPS and HREELS

Depth profiling of microwave nitrogen-terminated polycrystalline diamond surfaces by energy-dependent X-ray photoelectron spectroscopy

Computational investigation of incident ion angles and material erosion at rough graphite and silicon carbide divertor surfaces