Abstract:This article discloses a unique failure mode in high-voltage bidirectional (Bi-Di) silicon-controlled rectifier (BDSCR) cells during International Electrotechnical Commission (IEC) air discharge electrostatic discharge (ESD) events. Failure was found to be sensitive to IEC measurement conditions or variabilities such as the speed of IEC gun and angle of approach, which causes different stress rise times. Hence, observed failure was a peculiar function of the rise times of the discharge current waveform. Remarkably, failure in high-voltage BDSCR was observed only for a window of current rise times. A new approach is presented using 3-D TCAD simulations of multifinger BDSCR to study and probe the failure mechanism dependent on these system-level stress parameters and variabilities. By emulating the experimental conditions in a 3-D TCAD environment, physical insights are developed to probe the root cause of the observed air discharge failures. Furthermore, a device engineering approach has been proposed, with the help of 3-D TCAD simulations of multifinger BDSCR, which computationally demonstrated improved robustness of BDSCR multifinger cells against IEC air discharge failures. The proposed design mitigates the nonuniform turn-on and failure due to IEC stress or rise time variability at the cost of a negligibly small area overhead.

Asymmetric Early Leakage Failure in Bi-Directional SCR ESD Protection Device in BCD Technology

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

A High Failure-Current Gate-Controlled Dual-Direction SCR for High-Voltage ESD Protection in 0.18-μm BCD Technology

Unique Rise Time Sensitivity Leading to Air Discharge System-Level ESD Failures in Bidirectional High Voltage SCRs

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier

Study of Current Saturation Behaviors in Dual Direction SCR for ESD Applications.

Key factors affecting trigger voltage of SCRS for ESD protection

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

ESD protection design of DDSCR structure based on the 0.5 BCD process

A Robust Polysilicon-Assisted SCR in ESD Protection Application

Enhanced asymmetric DDSCR with high robustness for high-voltage ESD protection

Design of Dual-Directional SCR Structure With High Holding Voltage and Low Dynamic Resistance for High Voltage ESD Protection