Impact of deposition temperature on microstructure and properties of erbium oxide antireflective films deposited on CVD diamond substrates

Yabo Huang,Liangxian Chen,Siwu Shao,Xiaohua Zhu,Ke Huang,Kang An,Yuting Zheng,Jinlong Liu,Junjun Wei,Chengming Li
DOI: https://doi.org/10.1016/j.vacuum.2021.110547
IF: 4
2021-11-01
Vacuum
Abstract:<p>To improve the transmittance of chemical vapor deposition (CVD) diamond, erbium(III) oxide (Er<sub>2</sub>O<sub>3</sub>) antireflective films were deposited on CVD diamond substrates by radio frequency (RF) magnetron sputtering. Effects of deposition temperature on structure, chemical composition and properties of the samples were investigated. A strong correlation was observed between the deposition temperature and crystalline structure evolution of the Er<sub>2</sub>O<sub>3</sub> antireflective films. With rising deposition temperature, the deposition rate, grain size and surface roughness of the Er<sub>2</sub>O<sub>3</sub> antireflective films increased. Changes of composition and chemical bonding of the films were analyzed. Results showed that the amount of bonding between Er and O atoms surface as the temperature increased. The films were structured by amorphous, monoclinic and cubic phase, with preferential orientations of C-Er<sub>2</sub>O<sub>3</sub> {222} at deposition temperature increased to 400&nbsp;°C. A thickness of 10&nbsp;nm transition layer was observed between the Er<sub>2</sub>O<sub>3</sub> antireflective films and the CVD diamond substrates by transmission electron microscopy (TEM). Moreover, the transition layer feature primarily consisted of Er, O and C. The hardness and modulus of Er<sub>2</sub>O<sub>3</sub> antireflective films were increased for higher deposition temperature, which positively affects the IR transmittance and adhesion strength of the Er<sub>2</sub>O<sub>3</sub> antireflective films on CVD diamond substrates.</p>
materials science, multidisciplinary,physics, applied
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