Microstructure and infrared reflectance modulation properties in DC-sputtered tungsten oxide films

Jun Zhang,Xiu-li Wang,Yuan Lu,Ya Qiao,Xin-hui Xia,Jiang-ping Tu
DOI: https://doi.org/10.1007/s10008-010-1224-4
IF: 2.747
2010-01-01
Journal of Solid State Electrochemistry
Abstract:Tungsten oxide (WO 3 ) films were deposited on indium tin oxide glass by reactive DC magnetron sputtering of a tungsten target in an oxygen and argon atmosphere at different substrate temperatures. Infrared reflectance modulation properties of the films were investigated in the wavelength range of 2.5–25 μm. The morphology and structure of the films are strongly dependent on the substrate temperature, and therefore have a great influence on infrared reflectance modulation properties. The charge capacity and diffusion coefficient of H + ions in WO 3 films decrease, and the infrared reflectance modulation and color efficiency first increase and then decrease with increasing the deposition temperature. The values achieve a maximum of 40% and 18.5 cm 2 C −1 , respectively, at 9 μm and 250 °C.
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