Abstract:Atomic and close-to-atomic scale fabrication with high yield for the color centers in silicon carbide is critical in developing its applications. Combined with Wigner-Seitz method and identify diamond structure method to consider the structure around the silicon vacancy (VSi), it is found that He ion implantation is more likely to fabricate a small number of silicon vacancies with complete structure but locating deep, while Si ion implantation is more likely to introduce more silicon vacancies with incomplete structure but a large number and closer to the near surface. Therefore, a method of dual ion implantation is proposed in this paper. By adjusting the ratio of He to Si ion concentration for dual ion implantation, the fabrication yield of color centers with depth below 5 nm can be increased compared with that of He implantation after high temperature annealing. Molecular dynamics (MD) simulation is employed to discover the underlying mechanism of VSi color center and damage evolution by helium ion and dual ion implantation into four-hexagonal silicon carbide (4H–SiC) with subsequent annealing. Density-functional theory (DFT) calculation proves that magnetic-spin polarization enhances the stability of carbon anti-vacancy pair (CSiVC) defect, which indicates CSiVC defects are more stable than VSi defects. The evolution of the VSi color centers of different defect models are also calculated at various temperatures by MD, and the dynamic process of VSi defects to CSiVC defects is demonstrated. It is revealed that the decrease of the VSi color center at high temperature annealing is partly due to the transformation of some silicon vacancies to CSiVC defects.

Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators

Effect of helium-ion implantation on -SiC nanomechanical string resonators

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Anomalous Thermal Conductivity Enhancement in Low Dimensional Resonant Nanostructures Due to Imperfections

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Al-implantation induced damage in 4H-SiC

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Room-temperature coherent control of implanted defect spins in silicon carbide

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

Strain Engineering for Transition Metal Defects in SiC

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide

Engineering the dissipation of crystalline micromechanical resonators

A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures

Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators

Measurement of swelling-induced residual stress in ion implanted SiC, and its effect on micromechanical properties

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon

Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing