Abstract:Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.

Analytical Study of KOH Wet Etch Surface Passivation for III-Nitride Micropillars

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Ultradeep electron cyclotron resonance plasma etching of GaN

Faceting mechanisms of GaN nanopillar under KOH wet etching

On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes

Etching Kinetics of III–V Semiconductors Coupled with Surface Passivation Investigated by Scanning Electrochemical Microscopy

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1-xScxN in Aqueous KOH Solutions

Development of Micron Sized Photonic Devices Based on Deep GaN Etching

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Comparison of KOH and TMAH Etching on Sinw Arrays Fabricated via AFM Lithography

Simple Smoothing of the Bottom Silicon Surface Using Wet Chemical Etching Methods for Epitaxial III‐V/Silicon Tandem Manufacturing

Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond

Crystallographic Orientation Dependent Reactive Ion Etch in Single Crystal Diamond

Advanced Etching Techniques of LiNbO3 Nanodevices

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

Ellipsometric critical dimension metrology employing mid-infrared wavelengths for high-aspect-ratio channel hole module etch processes