Abstract:The conventional surface x-ray diffraction method [1] allows us to determine atomic arrangements of crystal surfaces and interfaces.While x-ray diffraction intensities distributed within a reciprocal lattice space are usually measured with a finetooth comb using the method, an overall image of the diffraction intensity profile is difficult to get until after such lengthy and time consuming measurement is completed.We proposed x-ray reciprocal-lattice space imaging method (X-ReSI) for straightforward understanding of 1D nanostructures such as NiO nanowires [2].The X-ReSI is a single-exposure diffraction technique which records the reciprocallattice pattern of a fixed crystalline nanostructure using a 2D detector.The fundamental idea behind the method is that the reciprocal lattice of 1D or 2D structures are an array of sheets or rods, respectively.Thus the reciprocal-lattice space can be recorded for a fixed sample with a 2D x-ray detector fixed.The typical exposure time is a few seconds to a few minutes using the 3rd generation x-ray source.We applied the method to structural evaluation of Bi nanolines being 1/8 monolayers in coverage on average.The results of the application reveal that Bi nanolines embeded in Si was found to have a 2 x n superstructure having Bi dimer bonds [3].On the other hand line structures in samples capped with an amorphous Si layer and having no cap layers still remained with a non-detectable amount of the 2 x n atomic structures.Other applications are structural determination of a Bi4Ti3O12 thinfilm and in-situ observation of a Au electrode in H2SO4.

A detailed analysis of impact collision ion scattering spectroscopy of bismuth selenide

Preparation of clean surfaces and Se vacancy formation in Bi$_{2}$Se$_{3}$ by ion bombardment and annealing

Termination of Single Crystal Bi2Se3 Surfaces Prepared by Various Methods

Spin-Dependent Ion Scattering on Bismuth Surfaces

Signal oscillations in helium scattering by bismuth atoms in the low energy range

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Ion-beam analysis of CuInSe2 solar cells deposited on polyimide foil

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Surface Termination of CleavedBi2Se3Investigated by Low Energy Ion Scattering

Application of Ion Scattering Spectroscopy to Investigations of the Interaction Between the Active Component and Carrier in Supported Catalysts

Halogen adsorption and reaction with Bi$_2$(Se,Te)$_3$ and Bi/Bi$_2$(Se,Te)$_3$

In situ study of crystal plane-dependent interfacial structural transformation in AgBiS 2

Resolving buried interfaces with Low Energy Ion Scattering

Studies of Fesi2/Si Quantum Dot Nano-Structures by X-Ray Bragg-Surface Diffractions (Bsd)

Atomic and Electronic Structure of Cesium Lead Triiodide Surfaces

The Electronic Structure of Clean and Adsorbate-Covered Bi2se3: an Angle-Resolved Photoemission Study

Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide

Observation of Dirac-like surface state bands on the top surface of BiSe