Abstract:Here, we report the crystal growth, physical and transport properties of Bi1-xSbx (x = 0.05, 0.1 and 0.15) topological insulator. Single crystals of Bi1-xSbx (x = 0.05, 0.1 and 0.15) were grown by melting bismuth and antimony together using the facile self flux method. The XRD measurements displayed highly indexed 00l lines and confirmed the crystalline nature as well as the rhombohedral structure of the Bi1-xSbx (x = 0.05, 0.1 and 0.15) crystals. Raman spectroscopy measurements for Bi1-xSbx system revealed four peaks within the spectral range of 10 to 250 cm-1 namely A1g and Eg modes corresponding to Bi-Bi and Sb-Sb vibrations. Scanning electron microscopy (SEM) and energy dispersive Temperature dependent electrical resistivity curves with and without applied magnetic field exhibited a metallic behaviour and linear non-saturating magneto-resistance (MR) respectively for all the antimony (Sb) concentrations of x = 0.05, 0.1 and 0.15. The lowest Sb concentration sample with x = 0.05 (Bi0.95Sb0.05) exhibited the highest MR value of about 1400%, followed by x = 0.1 and 0.15 samples (Bi0.9Sb0.1 and Bi0.85Sb0.05) with MR values reaching up to 500% and 110% respectively at 2K and 6Tesla applied field. The magneto-conductivity (MC) is fitted to the HLN (Hikami Larkin Nagaoka) equation and it is found that the charge conduction mechanism is mainly dominated by WAL (weak anti-localization) along with a small contribution from WL (weak localization) effect. Summarily, the short letter discusses the synthesis, interesting transport and magneto-transport properties of Bi1-xSbx (x = 0.05, 0.1 and 0.15), which could be useful in understanding the fascinating properties of topological insulators and their technological applications.

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Weak Antilocalization And Electron-Electron Interaction In Coupled Multiple-Channel Transport In A Bi2se3 Thin Film

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

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Flux Free Single Crystal Growth and Detailed Physical Property Characterization of Bi1-xSbx (x = 0.05, 0.1 and 0.15) Topological Insulator

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Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe

Ambipolar surface state transport in non-metallic stoichiometric Bi$_2$Se$_3$ crystals

Thickness and Growth-Condition Dependence of In-Situ Mobility and Carrier Density of Epitaxial Thin-Film Bi_2Se_3

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Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Bulk transport properties of Bismuth selenide thin films approaching the two-dimensional limit

Weak antilocalization in the topological semimetal candidate YbAuSb.

Glass-like Electronic and Thermal Transport in Crystalline Cubic Germanium Selenide

Emergence of a weak topological insulator from the Bi$_x$Se$_y$ family and the observation of weak anti-localization

Low Temperature Thermoelectric Properties of Bi2−xSbxTeSe2 Crystals Near the N–p Crossover