Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

J. Chen,H. J. Qin,F. Yang,J. Liu,T. Guan,F. M. Qu,G. H. Zhang,J. R. Shi,X. C. Xie,C. L. Yang,K. H. Wu,Y. Q. Li,L. Lu
DOI: https://doi.org/10.1103/PhysRevLett.105.176602
2010-03-11
Abstract:We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.
Mesoscale and Nanoscale Physics,Materials Science
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