Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

J. Chen,H. J. Qin,F. Yang,J. Liu,T. Guan,F. M. Qu,G. H. Zhang,J. R. Shi,X. C. Xie,C. L. Yang,K. H. Wu,Y. Q. Li,L. Lu

DOI: https://doi.org/10.1103/PhysRevLett.105.176602

2010-03-11

Abstract:We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: How to regulate the chemical potential in bismuth selenide (Bi₂Se₃) thin films through gate voltage, so as to achieve the control of the weak anti - localization phenomenon, and explore its relationship with surface - state and bulk - state conductivity. Specifically, the research aims to:

1. **Achieve the tunability of chemical potential**: By applying a back - gate voltage on the Bi₂Se₃ thin film, the researchers hope to be able to adjust the carrier density in the material within a large range, thereby changing the chemical potential.

2. **Suppress the bulk - state conductivity**: Previous studies have shown that the bulk - state conductivity of Bi₂Se₃ will interfere with the observation of its surface - state characteristics. Therefore, the researchers hope to make the system enter the so - called "topological transport regime" by reducing the chemical potential, that is, the bulk - state conductivity is suppressed and the surface - state dominates the transport characteristics.

3. **Understand the weak anti - localization (WAL) phenomenon**: Weak anti - localization is a quantum transport phenomenon caused by the phase coherence effect of the electron wave function. The researchers hope to study the changes in the WAL phenomenon by regulating the gate voltage, especially when the carrier density is reduced to a very low level.

4. **Explore the role of the surface - state**: The researchers also hope to verify the role of the surface - state in the WAL phenomenon through experimental data, and explore its association with the changes in longitudinal and Hall resistivity.

### Main findings

- **Large - range carrier density regulation**: Through the back - gate voltage, large - range regulation of carrier density can be achieved, with a maximum of ±2.5×10¹³ cm⁻².

- **Suppression of the bulk - state conductivity**: Under a negative gate voltage, the bulk - state conductivity is significantly weakened. In particular, when the carrier density is lower than a certain critical value, the system shows a transition from being dominated by the bulk - state to being dominated by the surface - state.

- **Voltage - dependence of weak anti - localization**: At a low carrier density, the weak anti - localization phenomenon shows an obvious dependence on the gate voltage, while it is almost unchanged at a high carrier density.

- **Evolution of the chemical potential**: Through theoretical model calculations, the researchers have shown the evolution of the chemical potential at different depths as the gate voltage changes, further supporting the view that the bulk - state conductivity is suppressed.

These findings provide important experimental basis and technical means for the application of three - dimensional topological insulators under normal temperature conditions.