Abstract:Studying the surface states of Bi2Se3 and Bi2Te3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi-2(SexTe1-x)(3) may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi-2(SexTe1-x)(3) nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi2Se3 to Bi2Te3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (similar to 10(19) cm(-3)) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives alpha of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is similar to T-0.49 within the appropriate field range (similar to 0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other.

Gate-Voltage Control Of Chemical Potential And Weak Antilocalization In Bi2se3

Gate-Voltage Control of Chemical Potential and Weak Antilocalization Inbi2se3

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

Weak antilocalization in Bi2(Se(x)Te(1-x))3 nanoribbons and nanoplates.

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Transport Properties Related to Two-Dimensional Surface States in Gate-Tunable Bi0.1Pb0.9Te Thin Films

Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$

Weak Antilocalization And Electron-Electron Interaction In Coupled Multiple-Channel Transport In A Bi2se3 Thin Film

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3

Chemical-Potential-Dependent Gap Opening At The Dirac Surface States Of Bi2se3 Induced By Aggregated Substitutional Cr Atoms

Gate-Modulated Weak Anti-Localization and Carrier Trapping in Individual Bi2se3 Nanoribbons

Quantitative Analysis of Weak Antilocalization Effect of Topological Surface States in Topological Insulator BiSbTeSe2

Gate-tunable Weak Antilocalization in a Few-Layer InSe

The Emerging Weak Antilocalization Effect in Semimetal Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ Single Crystal

Tuning the Quantum Oscillations of Surface Dirac Electrons in the Topological Insulator Bi$_2$Te$_2$Se by Liquid Gating

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit

Tunable Surface Conductivity In Bi2se3 Revealed In Diffusive Electron Transport

Magnetoresistance and Nonlinear Hall Effect in Quaternary Topological Insulator Bi1.5sb0.5te1.8se1.2

Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films

Proximity Effect Between a Topological Insulator and a Magnetic Insulator with Large Perpendicular Anisotropy