Abstract:Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In<sub>2</sub>Se<sub>3</sub>. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03724?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03724</a>.Figures of layer-dependent band structure for 1–4 TL InSe; figure of STS spectra in a linear scale for 1–5 TL InSe; figure of STS linecuts across various defects; figure of STS spectra with spatial homogeneity; figure of 2D plot of STS spectra across a strained defect; figure of STS spectra across various defects/step boundaries; figure of comparison for the QPI observations and the STS in determining the band gap size; figure of comparison for the onset and shoulder of band gap edge; figure of band bending across different layer steps (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03724/suppl_file/nn1c03724_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Gate-tunable Weak Antilocalization in a Few-Layer InSe

Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Unusual phonon behavior and ultra-low thermal conductance of monolayer InSe.

Phonon-Limited Mobility in N-Type Few-Layer InSe Devices from First Principles

Many-Body Effect and Device Performance Limit of Monolayer InSe.

Weak Antilocalization And Electron-Electron Interaction In Coupled Multiple-Channel Transport In A Bi2se3 Thin Film

Ab initio study of carrier mobility of few-layer InSe

Gate-Voltage Control of Chemical Potential and Weak Antilocalization Inbi2se3

The optical properties of few-layer InSe

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Crossover Between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator

Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model

High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Thickness-dependent charge transport in exfoliated indium selenide vertical field-effect transistors

Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas

Tuning the spin caloritronic transport properties of InSe monolayers <i>via</i> transition metal doping

Magnetotransport in hybrid InSe/monolayer graphene on SiC

Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device

Modulation of Optical Absorption Properties of Monolayer InSe by Introducing Intermediate Impurity Levels in the Band Gap