Abstract:Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects from interface disorders and the environment, which cause carrier mobility and density fluctuations and hinder their practical application. In this work, we employ the non-destructive method of van der Waals (vdW) integration to improve the electron mobility of back-gated multilayer InSe FETs. After introducing the hexagonal boron nitride (h-BN) as both an encapsulation layer and back-gate dielectric with the vdW interface, as well as graphene serving as a buffer contact layer, the electron mobilities of InSe FETs are substantially enhanced. The vdW-integrated devices exhibit a high electron mobility exceeding 103 cm2 V−1 s−1 and current on/off ratios of ~108 at room temperature. Meanwhile, the electron densities are found to exceed 1012 cm−2. In addition, the fabricated devices show an excellent stability with a negligible electrical degradation after storage in ambient conditions for one month. Electrical transport measurements on InSe FETs in different configurations suggest that a performance enhancement with vdW integration should arise from a sufficient screening effect on the interface impurities and an effective passivation of the air-sensitive surface.

Ab initio study of carrier mobility of few-layer InSe

The optical properties of few-layer InSe

Phonon-Limited Mobility in N-Type Few-Layer InSe Devices from First Principles

Theoretical prediction of intrinsic electron mobility of monolayer InSe: first-principles calculation

Gate-tunable Weak Antilocalization in a Few-Layer InSe

Electric field-modulated data storage in bilayer InSe

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

First-principles Based Ballistic Transport Simulation of Monolayer and Few-Layer InSe FETs

Phonon-limited Mobility of 2D Semiconductors: Quadrupole Scattering and Free-carrier Screening

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Electric Field Analyses on Monolayer Semiconductors: the Example of InSe

Examining two-dimensional Frohlich model and enhancing the electron mobility of monolayer InSe by dielectric engineering

Largely tunable band structures of few-layer InSe by uniaxial strain

Many-Body Effect and Device Performance Limit of Monolayer InSe.

Ab-Initio Simulations of Monolayer InSe and MoS2 Strain Effect: from Electron Mobility to Photoelectric Effect

Native Defects and Substitutional Impurities in Two-Dimensional Monolayer Inse

Electric Field and Uniaxial Strain Tunable Electronic Properties of the InSb/InSe Heterostructure.

Carrier and Phonon Transport in 2D InSe and Its Janus Structures

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure