Phonon-Limited Mobility in N-Type Few-Layer InSe Devices from First Principles

Pengying Chang,Xiaoyan Liu,Fei Liu,Gang Du
DOI: https://doi.org/10.1109/led.2018.2886842
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:A theoretical investigation on the phonon-limited mobility in intrinsic n-type few-layer indium selenide (InSe) double-gate devices for temperature T > 100 K is presented. The temperature-dependent mobility curves measured by quantum Hall effect are reproduced successfully by invoking the scatterings by acoustic phonon, homopolar optical phonon, longitudinal optical phonon via the deformation potential coupling, and the Frohlich interaction. In InSe, the Frohlich interaction plays the dominant role in determining the mobility. Additionally, simulated thickness-dependent mobility provides physical insight into the mobility degradation below 30 nm.
What problem does this paper attempt to address?