Abstract:Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in the ballistic limit. However, both experimental experience and theoretical calculations pointed out achieving high-quality ohmic has become the main limiting factor for high-performance 2D FET. In this work, we proposed a new sandwiched ohmic contact with indium for InSe FET and comprehensively evaluated its performance from views of material and device based on ab initio methods. The material properties denote that all of fundamental issues of ohmic contact including tunneling barrier, the Schottky barrier, and effective doping are well concerned by introducing the sandwiched structure, and excellent contact resistance was achieved. At device performance level, devices with gate length of 7, 5, and 3 nm were investigated. All metrics of sandwiched contacted devices far exceed requirement of the International Technology Roadmap for Semiconductors (ITRS) and exhibit obvious promotion as compared to conventional structures. Maximum boost of current with 69.4%, 50%, and 49% are achieved for devices with 7, 5, and 3 nm gate length, respectively. Meanwhile, maximum reduction of the intrinsic delay with 20.4%, 16.7%, and 18.9% are attained. Moreover, a benchmark of energy-delay product (EDP) against other 2D FETs is presented. All InSe FETs with sandwiched ohmic contact surpass MoS2 FETs as well as requirement from ITRS 2024. The best result approaches the upper limit of ideal BP FET, denoting superior preponderance of sandwiched structures for InSe FETs in the next generation of complementary metal-oxide semiconductor (CMOS) technology.

First-principles Based Ballistic Transport Simulation of Monolayer and Few-Layer InSe FETs

Many-Body Effect and Device Performance Limit of Monolayer InSe.

Ballistic two-dimensional InSe transistors

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors

Electronic Structure and Quantum Transport Properties of 2D SiP: A First-Principles Study

DFT Coupled with NEGF Study of the Electronic Properties and Ballistic Transport Performances of 2D SbSiTe3

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

High-Mobility Inse Transistors: the Role of Surface Oxides

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack.

Phonon-Limited Mobility in N-Type Few-Layer InSe Devices from First Principles

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities Via the Suppression of Carrier Scattering from a Dielectric Interface.

Ab initio study of carrier mobility of few-layer InSe

Thickness-dependent charge transport in exfoliated indium selenide vertical field-effect transistors

Ballistic Transport in Planar 2-D ZnXN2 (X = Si, Ge) Transistors With Ultrahigh On-State Current

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3