Abstract:Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in the ballistic limit. However, both experimental experience and theoretical calculations pointed out achieving high-quality ohmic has become the main limiting factor for high-performance 2D FET. In this work, we proposed a new sandwiched ohmic contact with indium for InSe FET and comprehensively evaluated its performance from views of material and device based on ab initio methods. The material properties denote that all of fundamental issues of ohmic contact including tunneling barrier, the Schottky barrier, and effective doping are well concerned by introducing the sandwiched structure, and excellent contact resistance was achieved. At device performance level, devices with gate length of 7, 5, and 3 nm were investigated. All metrics of sandwiched contacted devices far exceed requirement of the International Technology Roadmap for Semiconductors (ITRS) and exhibit obvious promotion as compared to conventional structures. Maximum boost of current with 69.4%, 50%, and 49% are achieved for devices with 7, 5, and 3 nm gate length, respectively. Meanwhile, maximum reduction of the intrinsic delay with 20.4%, 16.7%, and 18.9% are attained. Moreover, a benchmark of energy-delay product (EDP) against other 2D FETs is presented. All InSe FETs with sandwiched ohmic contact surpass MoS2 FETs as well as requirement from ITRS 2024. The best result approaches the upper limit of ideal BP FET, denoting superior preponderance of sandwiched structures for InSe FETs in the next generation of complementary metal-oxide semiconductor (CMOS) technology.

Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors

Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

Ohmic contact in monolayer InSe-metal interface

Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

N-Type Ohmic Contact and P-Type Schottky Contact of Monolayer InSe Transistors

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

Bilayer Tellurene–metal Interfaces

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

First-principles Based Ballistic Transport Simulation of Monolayer and Few-Layer InSe FETs

External-strain Induced Transition from Schottky to Ohmic Contact in Graphene/InS and Graphene/Janus In2SSe Heterostructures

Performance improvement of multilayer InSe transistors with optimized metal contacts

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

First-principles study of phase transition in the α-In2Se3/metal heterostructures

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

h-BN-assisted-transferred metal contacts to InSe for twodimensional multifunctional electronic devices