Abstract:Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in the ballistic limit. However, both experimental experience and theoretical calculations pointed out achieving high-quality ohmic has become the main limiting factor for high-performance 2D FET. In this work, we proposed a new sandwiched ohmic contact with indium for InSe FET and comprehensively evaluated its performance from views of material and device based on ab initio methods. The material properties denote that all of fundamental issues of ohmic contact including tunneling barrier, the Schottky barrier, and effective doping are well concerned by introducing the sandwiched structure, and excellent contact resistance was achieved. At device performance level, devices with gate length of 7, 5, and 3 nm were investigated. All metrics of sandwiched contacted devices far exceed requirement of the International Technology Roadmap for Semiconductors (ITRS) and exhibit obvious promotion as compared to conventional structures. Maximum boost of current with 69.4%, 50%, and 49% are achieved for devices with 7, 5, and 3 nm gate length, respectively. Meanwhile, maximum reduction of the intrinsic delay with 20.4%, 16.7%, and 18.9% are attained. Moreover, a benchmark of energy-delay product (EDP) against other 2D FETs is presented. All InSe FETs with sandwiched ohmic contact surpass MoS2 FETs as well as requirement from ITRS 2024. The best result approaches the upper limit of ideal BP FET, denoting superior preponderance of sandwiched structures for InSe FETs in the next generation of complementary metal-oxide semiconductor (CMOS) technology.

Performance improvement of multilayer InSe transistors with optimized metal contacts

Improving the Electrical Performances of InSe Transistors by Interface Engineering

Improving the Electrical Performances of InSe Transistor by Interface Engineering

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors

N-Type Ohmic Contact and P-Type Schottky Contact of Monolayer InSe Transistors

Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Many-Body Effect and Device Performance Limit of Monolayer InSe.

Ohmic contact in monolayer InSe-metal interface

First-principles Based Ballistic Transport Simulation of Monolayer and Few-Layer InSe FETs

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

h-BN-assisted-transferred metal contacts to InSe for twodimensional multifunctional electronic devices

Impact of Metal Contacts on the Performance of Multilayer HfS2 Field-Effect Transistors

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

Enhancement of Electronic and Optoelectronic Performance of the InSe Multilayer by Surface Transfer Engineering