Abstract:Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in the ballistic limit. However, both experimental experience and theoretical calculations pointed out achieving high-quality ohmic has become the main limiting factor for high-performance 2D FET. In this work, we proposed a new sandwiched ohmic contact with indium for InSe FET and comprehensively evaluated its performance from views of material and device based on ab initio methods. The material properties denote that all of fundamental issues of ohmic contact including tunneling barrier, the Schottky barrier, and effective doping are well concerned by introducing the sandwiched structure, and excellent contact resistance was achieved. At device performance level, devices with gate length of 7, 5, and 3 nm were investigated. All metrics of sandwiched contacted devices far exceed requirement of the International Technology Roadmap for Semiconductors (ITRS) and exhibit obvious promotion as compared to conventional structures. Maximum boost of current with 69.4%, 50%, and 49% are achieved for devices with 7, 5, and 3 nm gate length, respectively. Meanwhile, maximum reduction of the intrinsic delay with 20.4%, 16.7%, and 18.9% are attained. Moreover, a benchmark of energy-delay product (EDP) against other 2D FETs is presented. All InSe FETs with sandwiched ohmic contact surpass MoS2 FETs as well as requirement from ITRS 2024. The best result approaches the upper limit of ideal BP FET, denoting superior preponderance of sandwiched structures for InSe FETs in the next generation of complementary metal-oxide semiconductor (CMOS) technology.

Ballistic two-dimensional InSe transistors

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Many-Body Effect and Device Performance Limit of Monolayer InSe.

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

First-principles Based Ballistic Transport Simulation of Monolayer and Few-Layer InSe FETs

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

High-Mobility Inse Transistors: the Role of Surface Oxides

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Ballistic Transport in Planar 2-D ZnXN2 (X = Si, Ge) Transistors With Ultrahigh On-State Current

Stable InSe Transistors with High-Field Effect Mobility for Reliable Nerve Signal Sensing

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Sub-5-nm Ultra-thin In_2O_3 Transistors for High-Performance and Low-Power Electronic Applications

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

A Single-Crystalline Native Dielectric for Two-Dimensional Semiconductors with an Equivalent Oxide Thickness below 0.5 Nm

Electronic Structure and Quantum Transport Properties of 2D SiP: A First-Principles Study