Abstract:Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In<sub>2</sub>Se<sub>3</sub>. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03724?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03724</a>.Figures of layer-dependent band structure for 1–4 TL InSe; figure of STS spectra in a linear scale for 1–5 TL InSe; figure of STS linecuts across various defects; figure of STS spectra with spatial homogeneity; figure of 2D plot of STS spectra across a strained defect; figure of STS spectra across various defects/step boundaries; figure of comparison for the QPI observations and the STS in determining the band gap size; figure of comparison for the onset and shoulder of band gap edge; figure of band bending across different layer steps (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03724/suppl_file/nn1c03724_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

What problem does this paper attempt to address?

The paper aims to study the bandgap enhancement effect and related electronic properties of ultra-thin indium selenide (InSe) films under strain. Specifically, the paper characterizes InSe films grown by molecular beam epitaxy (MBE) and scanning tunneling microscopy (STM), and explores the changes in their electronic properties with film thickness. The main research contents include: 1. **Film Synthesis and Characterization**: High-quality InSe films were successfully synthesized using MBE technology, and their atomic structure was characterized in detail using STM. 2. **Bandgap Variation**: As the film thickness decreases, the quantum confinement effect increases the bandgap of the InSe films. 3. **Effect of Lattice Defects on Strain and Bandgap**: Near lattice defects, local compressive strain significantly increases the bandgap, forming a type-I band alignment. 4. **Formation of Two-Dimensional Electron Gas (2DEG)**: Through substrate doping, a high-mobility 2DEG spontaneously formed in the InSe films, which is of great significance for future applications in nanoelectronics and optoelectronics devices. In summary, this study reveals the unique physical properties of ultra-thin InSe films and their potential application value.

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