Abstract:Studying the surface states of Bi2Se3 and Bi2Te3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi-2(SexTe1-x)(3) may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi-2(SexTe1-x)(3) nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi2Se3 to Bi2Te3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (similar to 10(19) cm(-3)) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives alpha of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is similar to T-0.49 within the appropriate field range (similar to 0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other.

Gate-Modulated Weak Anti-Localization and Carrier Trapping in Individual Bi2se3 Nanoribbons

Nontrivial Surface State Transport In Bi2se3 Topological Insulator Nanoribbons

Gate-Modulated Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbon

Weak antilocalization in Bi2(Se(x)Te(1-x))3 nanoribbons and nanoplates.

Manipulating Surface States in Topological Insulator Nanoribbons

Gate-tuned Aharonov-Bohm Interference of Surface States in a Quasi-Ballistic Dirac Semimetal Nanowire

Quantum Transport Characteristics of Heavily Doped Bismuth Selenide Nanoribbons

Ultra-low Carrier Concentration and Surface-Dominant Transport in Antimony-Doped Bi 2 Se 3 Topological Insulator Nanoribbons

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Nanoribbons of large-gap quantum spin Hall insulator: Electronic structures and transport properties

Aharonov-Bohm interference in topological insulator nanoribbons

Coherent topological transport on the surface of Bi₂Se₃

Multiple Channel Transport Properties of Topological Surface States in SmB6 Nanoribbons

Chiral edge transport along domain walls in magnetic topological insulator nanoribbons

Gate-Voltage Control of Chemical Potential and Weak Antilocalization Inbi2se3

Experimental Evidence and Control of the Bulk-Mediated Intersurface Coupling in Topological Insulator Bi2Te2Se Nanoribbons

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Robust Surface State Transport in Thin Bismuth Nanoribbons

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide